TIGER ELECTRONIC CO.,LTD
Product specification
HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR
NPN TRANSISTOR
■
HIGH VOLTAGE CAPABILITY
■
LOW SPREAD OF DYNAMIC PARAMETERS
■
MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■
VERY HIGH SWITCHING SPEED
■
BUL128
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage
capability. It uses a Cellular Emitter structure
with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
APPLICATIONS
■
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
ol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
700
400
9
4.0
2.0
70
150
-65~150
Unit
V
V
V
A
A
W
o
o
C
C
TO-220AB
Storage Temperature
(Tcase = 25
℃
unless otherwise specified)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
Emitter-Base Voltage (I
C
=0)
DC Current Gain
Symbol
Test Conditions
V
CE
=700V, I
E
=0
V
EB
=9V, I
C
=0
I
C
=100mA, I
B
=0
I
E
=10mA
V
CE
=5V, I
C
=2.0A
V
CE
=5V, I
C
=10mA
I
C
=1.0A,I
B
=0.2A
I
C
=4.0A, I
B
=1.0A
I
C
=1.0A,I
B
=0.2A
I
C
=2.5A,I
B
=0.5A
I
C
=2.5A I
B1
=-I
B2
=0.5A
Min.
—
—
400
9
14
10
—
—
—
—
1.5
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
0.1
0.1
—
—
40
—
1.0
1.5
1.2
1.3
3.0
us
V
V
Unit
mA
mA
V
V
I
CES
I
EBO
V
CEO
V
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
T
S
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
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