BUK95/96/9E06-55B
N-channel TrenchMOS™ logic level FET
Rev. 03 — 30 November 2004
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low
on-state resistance.
1.2 Features
s
TrenchMOS™ technology
s
175
°C
rated
s
Q101 compliant
s
Logic level compatible.
1.3 Applications
s
Automotive systems
s
Motors, lamps and solenoids
s
12 V and 24 V loads
s
General purpose power switching.
1.4 Quick reference data
s
E
DS(AL)S
≤
679 mJ
s
I
D
≤
75 A
s
R
DSon
= 5.1 mΩ (typ)
s
P
tot
≤
258 W.
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning
Description
gate (G)
drain (D)
source (S)
mounting base;
connected to drain (D)
123
3
[1]
Simplified outline
mb
mb
Symbol
mb
D
G
mbb076
S
2
1
1 2 3
SOT226 (I
2
-PAK)
SOT404 (D
2
-PAK)
SOT78 (TO-220AB)
[1]
It is not possible to make a connection to pin 2 of the SOT404 package.
Philips Semiconductors
BUK95/96/9E06-55B
N-channel TrenchMOS™ logic level FET
3. Ordering information
Table 2:
Ordering information
Package
Name
BUK9506-55B
BUK9606-55B
BUK9E06-55B
TO-220AB
D
2
-PAK
I
2
-PAK
Description
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Version
SOT78
Type number
Plastic single-ended surface mounted package (Philips version of D
2
-PAK); SOT404
3 leads (one lead cropped)
Plastic single-ended package (Philips version of I
2
-PAK); low-profile 3 lead
TO-220AB
SOT226
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
T
mb
= 25
°C;
V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
°C;
V
GS
= 5 V;
Figure 2
I
DM
P
tot
T
stg
T
j
I
DR
I
DRM
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current (DC)
peak reverse drain current
T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs
unclamped inductive load; I
D
= 75 A;
V
DS
≤
55 V; R
GS
= 50
Ω;
V
GS
= 5 V; starting
at T
j
= 25
°C
[1]
[2]
[1]
[2]
[2]
Conditions
R
GS
= 20 kΩ
Min
-
-
-
-
-
-
-
-
−55
−55
-
-
-
-
Max
55
55
±15
146
75
75
587
258
+175
+175
146
75
587
679
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs;
Figure 3
T
mb
= 25
°C;
Figure 1
Source-drain diode
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
[1]
[2]
Current is limited by power dissipation chip rating
Continuous current is limited by package
9397 750 13519
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 30 November 2004
2 of 15
Philips Semiconductors
BUK95/96/9E06-55B
N-channel TrenchMOS™ logic level FET
120
P
der
(%)
80
03aa16
150
I
D
(A)
100
03nh85
Capped at 75 A due to package
40
50
0
0
50
100
150
T
mb
(
°
C)
200
0
0
50
100
150
T
mb
(
°
C)
200
P
tot
P
der
=
----------------------
×
100%
-
P
°
tot
(
25 C
)
V
GS
≥
5 V
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
Fig 2. Continuous drain current as a function of
mounting base temperature.
03nh83
t
p
= 10
µ
s
100
µ
s
Capped at 75 A due to package
DC
1 ms
10 ms
100 ms
10
1
10
-1
1
10
V
DS
(V)
10
2
T
mb
= 25
°C;
I
DM
is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 13519
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 30 November 2004
3 of 15
Philips Semiconductors
BUK95/96/9E06-55B
N-channel TrenchMOS™ logic level FET
5. Thermal characteristics
Table 4:
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Conditions
Min
-
-
-
Typ
-
60
50
Max
0.58
-
-
Unit
K/W
K/W
K/W
thermal resistance from junction to mounting base
Figure 4
thermal resistance from junction to ambient
SOT78 (TO-220AB) and SOT226 (I
2
-PAK)
SOT404 (D
2
-PAK)
vertical in free air
mounted on a printed-circuit
board; minimum footprint;
vertical in still air
Symbol Parameter
5.1 Transient thermal impedance
03nh84
1
Z
th(j-mb)
(K/W)
10
-1
δ
= 0.5
0.2
0.1
0.05
0.02
10
-2
P
δ
=
t
p
T
single shot
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
T
t
t
p
(s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 13519
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 30 November 2004
4 of 15
Philips Semiconductors
BUK95/96/9E06-55B
N-channel TrenchMOS™ logic level FET
6. Characteristics
Table 5:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
(BR)DSS
Parameter
drain-source breakdown voltage
Conditions
I
D
= 250
µA;
V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
and
10
T
j
= 25
°C
T
j
= 175
°C
T
j
=
−55 °C
I
DSS
drain-source leakage current
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 175
°C
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
V
GS
=
±15
V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 25 A;
Figure 6
and
8
T
j
= 25
°C
T
j
= 175
°C
V
GS
= 4.5 V; I
D
= 25 A;
Figure 6
and
8
V
GS
= 10 V; I
D
= 25 A;
Figure 6
and
8
Dynamic characteristics
Q
g(tot)
Q
gs
Q
gd
V
plat
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
d
total gate charge
gate-source charge
gate-drain (Miller) charge
plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
from drain lead 6 mm from package to
center of die
from contact screw on mounting base to
center of die SOT78
from upper edge of drain mounting base
to center of die SOT404/SOT226
L
s
internal source inductance
from source lead to source bonding pad
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V; R
G
= 10
Ω
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
Figure 12
I
D
= 25 A; V
DD
= 44 V; V
GS
= 5 V;
Figure 14
and
16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
11
22
2.4
755
255
37
95
117
106
4.5
3.5
2.5
7.5
-
-
-
-
906
350
-
-
-
-
-
-
-
-
nC
nC
nC
V
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
-
-
-
-
5.1
-
-
4.8
6.0
12
6.4
5.4
mΩ
mΩ
mΩ
mΩ
-
-
-
0.02
-
2
1
500
100
µA
µA
nA
1.1
0.5
-
1.5
-
-
2
-
2.3
V
V
V
55
50
-
-
-
-
V
V
Min
Typ
Max
Unit
Static characteristics
5 674 7565 pF
9397 750 13519
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 30 November 2004
5 of 15
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