BUK952R4-40C
N-channel TrenchMOS logic level FET
Rev. 02 — 11 April 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Q101 compliant
Suitable for thermally demanding
environments due to 175
°C
rating
1.3 Applications
12 V loads
General purpose power switching
Automotive systems
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
E
DS(AL)S
Quick reference
Parameter
drain-source voltage
drain current
total power dissipation
non-repetitive
drain-source
avalanche energy
gate-drain charge
Conditions
T
j
≥
25
°C;
T
j
≤
175
°C
V
GS
= 5 V; T
j
= 25
°C;
see
Figure 1
and
4
T
mb
= 25
°C;
see
Figure 2
I
D
= 100 A; V
sup
≤
40 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25
°C;
unclamped
V
GS
= 5 V; I
D
= 25 A;
V
DS
= 32 V; see
Figure 14
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25
°C;
see
Figure 12, 11
and
13
[1][2]
Min
-
-
-
-
Typ
-
-
-
-
Max
40
100
333
1.2
Unit
V
A
W
J
Avalanche ruggedness
Dynamic characteristics
Q
GD
-
73
-
nC
Static characteristics
R
DSon
drain-source on-state
resistance
-
2.1
2.4
mΩ
[1]
[2]
Continuous current is limited by package.
Refer to document 9397 750 12572 for further information.
NXP Semiconductors
BUK952R4-40C
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning
Symbol
G
D
S
D
Description
gate
drain
source
mounting base;
connected to drain
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK952R4-40C
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Version
SOT78
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25
°C;
V
GS
= 5 V; see
Figure 1
V
GS
= 5 V; T
j
= 100
°C;
see
Figure 1
V
GS
= 5 V; T
j
= 25
°C;
see
Figure 1
and
4
I
DM
P
tot
T
stg
T
j
peak drain current
total power dissipation
storage temperature
junction temperature
I
D
= 100 A; V
sup
≤
40 V; R
GS
= 50
Ω;
V
GS
= 5 V; T
j(init)
= 25
°C;
unclamped
see
Figure 3
[4][5]
[6]
[1]
[2][3]
[2][3]
Conditions
T
j
≥
25
°C;
T
j
≤
175
°C
R
GS
= 20 kΩ
Min
-
-
-15
-
-
-
-
-
-55
-55
-
Max
40
40
15
270
100
100
1080
333
175
175
1.2
Unit
V
V
V
A
A
A
A
W
°C
°C
J
T
mb
= 25
°C;
t
p
≤
10
μs;
pulsed; see
Figure 4
T
mb
= 25
°C;
see
Figure 2
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
E
DS(AL)R
repetitive drain-source
avalanche energy
-
-
J
BUK952R4-40C_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 11 April 2008
2 of 13
NXP Semiconductors
BUK952R4-40C
N-channel TrenchMOS logic level FET
Table 4.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Source-drain diode
I
S
I
SM
[1]
[2]
[3]
[4]
[5]
[6]
Conditions
T
mb
= 25
°C
t
p
≤
10
μs;
pulsed; T
mb
= 25
°C
[2][3]
Min
-
-
Max
100
1080
Unit
A
A
source current
peak source current
Current is limited by chip power dissipation rating.
Continuous current is limited by package.
Refer to document 9397 750 12572 for further information.
Single-pulse avalanche rating limited by maximum junction temperature of 175
°C.
Repetitive avalanche rating limited by an average junction temperature of 170
°C.
Refer to application note AN10273 for further information.
300
I
D
(A)
200
003aac267
120
P
der
(%)
80
03na19
100
40
(1)
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
P
tot
P
tot
(25°C )
200
V
GS
5V
P
der
=
× 100 %
(1) Capped at 100 A due to package.
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK952R4-40C_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 11 April 2008
3 of 13
NXP Semiconductors
BUK952R4-40C
N-channel TrenchMOS logic level FET
10
3
I
AL
(A)
10
2
(1)
003aac266
(2)
10
(3)
1
10
-1
10
-3
10
-2
10
-1
1 t (ms) 10
AL
(1) Single pulse;T
j
= 25
°C.
(2) Single pulse;T
j
= 150
°C.
(3) Repetitive.
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
10
4
I
D
(A)
10
3
Limit R
DSon
= V
DS
/ I
D
003aac271
t
p
= 10
μs
10
2
(1)
100
μs
10
DC
1
1 ms
10 ms
100 ms
10
-1
10
-1
1
10
V
DS
(V)
10
2
T
mb
= 25
°C; I
DM
is single pulse
(1) Capped at 100 A due to package.
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK952R4-40C_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 11 April 2008
4 of 13
NXP Semiconductors
BUK952R4-40C
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to
mounting base
Conditions
vertical in free air
Min
-
Typ
60
Max
-
Unit
K/W
R
th(j-mb)
see
Figure 5
-
-
0.45
K/W
1
Z
th(j-mb)
(K/W)
δ
= 0.5
10
−1
0.2
0.1
0.05
0.02
10
−2
P
003aab020
δ
=
t
p
T
single shot
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
Conditions
I
D
= 250
μA;
V
GS
= 0 V;
T
j
= 25
°C
I
D
= 250
μA;
V
GS
= 0 V;
T
j
= -55
°C
V
GS(th)
gate-source threshold I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25
°C;
voltage
see
Figure 9
and
10
I
D
= 1 mA; V
DS
= V
GS
;
T
j
= -55
°C;
see
Figure 9
I
D
= 1 mA; V
DS
= V
GS
;
T
j
= 175
°C;
see
Figure 9
I
DSS
drain leakage current
V
DS
= 40 V; V
GS
= 0 V;
T
j
= 175
°C
V
DS
= 40 V; V
GS
= 0 V; T
j
= 25
°C
BUK952R4-40C_2
Min
40
36
1
-
0.5
-
-
Typ
-
-
1.5
-
-
-
0.02
Max
-
-
2
2.3
-
500
1
Unit
V
V
V
V
V
μA
μA
Static characteristics
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 11 April 2008
5 of 13
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