BUK9520-100B
N-channel TrenchMOS logic level FET
Rev. 01 — 6 May 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC-Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max
100
63
203
Unit
V
A
W
drain-source voltage T
j
≥
25 °C; T
j
≤
175 °C
drain current
total power
dissipation
Symbol Parameter
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
= 4.5 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 12;
see
Figure 11
-
16.4
22.3
mΩ
I
D
= 63 A; V
sup
≤
100 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
-
-
222
mJ
-
16.2
20
mΩ
NXP Semiconductors
BUK9520-100B
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
G
D
S
D
Description
gate
drain
source
mounting base; connected to
drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78A
(3-lead TO-220AB; SC-46;
SFM3)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK9520-100B
3-lead
TO-220AB;
SC-46;
SFM3
Description
Version
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78A
TO-220AB
Type number
BUK9520-100B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2009
2 of 12
NXP Semiconductors
BUK9520-100B
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
T
mb
= 25 °C; V
GS
= 5 V; see
Figure 1;
see
Figure 3
T
mb
= 100 °C; V
GS
= 5 V; see
Figure 1
T
mb
= 25 °C; t
p
≤
10 µs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-15
-
-
-
-
-55
-55
-
-
-
Max
100
100
15
63
45
253
203
175
175
63
253
222
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
non-repetitive
I
D
= 63 A; V
sup
≤
100 V; R
GS
= 50
Ω;
V
GS
= 5 V;
drain-source avalanche T
j(init)
= 25 °C; unclamped
energy
120
I
der
(%)
80
03aa24
120
P
der
(%)
80
03na19
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
BUK9520-100B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2009
3 of 12
NXP Semiconductors
BUK9520-100B
N-channel TrenchMOS logic level FET
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
t
p
=10
μs
100
μs
10
DC
1ms
10 ms
100 ms
003aac769
1
10
-1
1
10
10
2
V
DS
(V)
10
3
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
-
Typ
-
Max
0.75
Unit
K/W
thermal resistance from see
Figure 4
junction to mounting
base
thermal resistance from vertical in still air; SOT78 package
junction to ambient
R
th(j-a)
-
60
-
K/W
1
Z
th (j-mb)
(K/W)
δ
= 0.5
0.2
10
-1
0.1
0.05
0.02
10
-2
s ingle s hot
P
003a a c770
δ
=
t
p
T
t
p
T
t
10
-3
1e -6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s )
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9520-100B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2009
4 of 12
NXP Semiconductors
BUK9520-100B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 10
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 100 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -10 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= 10 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11;
see
Figure 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11;
see
Figure 12
V
GS
= 5 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 12;
see
Figure 11
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 12;
see
Figure 11
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
from drain lead 6 mm from package to
centre of die; T
j
= 25 °C
from upper edge of drain mounting base to
centre of die; T
j
= 25 °C
L
S
internal source
inductance
from source lead to source bond pad;
T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 16
I
D
= 25 A; V
DS
= 80 V; V
GS
= 5 V;
T
j
= 25 °C; see
Figure 14;
see
Figure 15
-
-
-
-
-
-
-
-
-
-
-
-
-
53.4
9.5
21.2
4300
340
150
45
116
173
77
4.5
2.5
7.5
-
-
-
5657
411
201
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
Min
100
90
1
0.5
-
-
-
-
-
-
-
-
-
Typ
-
-
1.58
-
-
-
0.05
2
2
16.4
15.6
-
16.2
Max
-
-
2
-
2.3
500
1
100
100
22.3
18.5
50
20
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Static characteristics
BUK9520-100B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2009
5 of 12
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