BUK9107-40ATC
N-channel TrenchPLUS logic level FET
Rev. 04 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Low conduction losses due to low
on-state resistance
Q101 compliant
1.3 Applications
12 V and 24 V high power motor
drives
Automotive and general purpose
power switching
Electrical Power Assisted Steering
(EPAS)
Protected drive for lamps
1.4 Quick reference data
Table 1.
I
D
P
tot
T
j
R
DSon
Quick reference
Conditions
V
GS
= 5 V; T
mb
= 25 °C; see
Figure 2;
see
Figure 3
T
mb
= 25 °C; see
Figure 1
V
GS
= 10 V; I
D
= 50 A; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 50 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 50 A; T
j
= 25 °C;
see
Figure 7;
see
Figure 8
S
F(TSD)
V
F(TSD)
temperature sense diode
temperature coefficient
temperature sense diode
forward voltage
[1]
Symbol Parameter
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
Min
[1]
-
-
-55
-
-
-
-1.4
648
Typ
-
-
-
5.2
6
5.8
-1.54
658
Max
140
272
175
6.2
7.7
7
-1.68
668
Unit
A
W
°C
mΩ
mΩ
mΩ
mV/K
mV
I
F
= 250 µA; T
j
> -55 °C; T
j
< 175 °C
I
F
= 250 µA; T
j
= 25 °C
Current is limited by power dissipation chip rating.
NXP Semiconductors
BUK9107-40ATC
N-channel TrenchPLUS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
mb
Pinning information
Symbol
G
A
D
K
S
D
Description
gate
anode
drain
cathode
source
mounting base; connected to
drain
1 2
3
45
MBL306
Simplified outline
mb
Graphic symbol
d
a
g
s
k
SOT426
(D2PAK)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
BUK9107-40ATC D2PAK
plastic single-ended surface-mounted package (D2PAK); 5 leads (one
lead cropped)
Version
SOT426
BUK9107-40ATC_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 16 February 2009
2 of 15
NXP Semiconductors
BUK9107-40ATC
N-channel TrenchPLUS logic level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
GS
I
D
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C;
[1]
[1]
T
mb
= 25 °C; V
GS
= 5 V; see
Figure 2;
see
Figure 3 [2]
T
mb
= 25 °C; V
GS
= 5 V; see
Figure 2;
see
Figure 3 [3]
T
mb
= 100 °C; V
GS
= 5 V; see
Figure 2
I
DM
P
tot
I
DG(CL)
I
GS(CL)
V
isol(FET-TSD)
peak drain current
total power dissipation
drain-gate clamping
current
gate-source clamping
current
FET to temperature
sense diode isolation
voltage
storage temperature
junction temperature
drain-gate voltage
source current
peak source current
non-repetitive
drain-source clamping
energy
I
DG
= 250 µA;
T
mb
= 25 °C;
T
mb
= 25 °C;
I
SM
Clamping
E
DS(CL)S
I
D
= 75 A; V
DS
≤
40 V; V
GS
= 5 V; R
GS
= 10 kΩ;
unclamped; T
j(init)
= 25 °C
-
1.4
J
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
[1]
[2]
[3]
T
mb
= 25 °C; t
p
≤
10 µs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 1
pulsed; t
p
= 5 ms;
δ
= 0.01
pulsed; t
p
= 5 ms;
δ
= 0.01
continuous
[3]
Min
-
-15
-
-
-
-
-
-
-
-
-100
Max
40
15
140
75
75
560
272
50
50
10
100
Unit
V
V
A
A
A
A
W
mA
mA
mA
V
In accordance with the Absolute Maximum Rating System (IEC 60134).
T
stg
T
j
V
DGS
I
S
-55
-55
-
-
-
-
175
175
40
140
75
560
°C
°C
V
A
A
A
Source-drain diode
Electrostatic discharge
V
esd
electrostatic discharge HBM; C = 100 pF; R = 1.5 kΩ; pins 1, 3, 5
voltage
[1]
[2]
[3]
Voltage is limited by clamping.
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
-
6
kV
BUK9107-40ATC_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 16 February 2009
3 of 15
NXP Semiconductors
BUK9107-40ATC
N-channel TrenchPLUS logic level FET
120
P
der
(%)
80
03na19
150
ID
(A)
125
03ne74
100
75
Capped at 75 A due to package
40
50
25
0
0
50
100
150
T
mb
(°C)
200
0
25
50
75
100
125
150
175
200
Tmb (oC)
Fig 2.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
Normalized continuous drain current as a
function of mounting base temperature
103
ID
(A)
Limit RDSon = VDS/ID
03ne75
tp = 10 µs
102
100 µs
Capped at 75 A due to package
DC
10
1 ms
10 ms
100 ms
1
1
10
VDS (V)
102
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9107-40ATC_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 16 February 2009
4 of 15
NXP Semiconductors
BUK9107-40ATC
N-channel TrenchPLUS logic level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-a)
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
-
-
Typ
-
-
Max
50
0.55
Unit
K/W
K/W
thermal resistance from mounted on printed-circuit board;
junction to ambient
minimum footprint
thermal resistance from see
Figure 4
junction to mounting
base
1
03ne76
Z
th(j-mb)
(K/W)
10-1
δ
= 0.5
0.2
0.1
0.05
0.02
Single Shot
P
δ
=
tp
T
10-2
tp
T
t
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9107-40ATC_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 16 February 2009
5 of 15
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