BUK7Y35-55B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Advanced braking systems (ABS)
Automotive systems
Engine management
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
55
V
28.4 A
3
60
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 15 A;
T
j
= 25 °C; see
Figure 12;
see
Figure 13
-
28
35
mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 28.43 A; V
sup
≤
55 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 10 V;
avalanche energy T
j(init)
= 25 °C; unclamped
gate-drain charge I
D
= 15 A; V
DS
= 44 V;
V
GS
= 10 V; see
Figure 14
-
-
33
mJ
Dynamic characteristics
Q
GD
-
5.34 -
nC
NXP Semiconductors
BUK7Y35-55B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
S
S
G
D
source
source
source
gate
mounting base; connected to
drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
1 2 3 4
SOT669 (LFPAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7Y35-55B
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
Type number
BUK7Y35-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 April 2010
2 of 14
NXP Semiconductors
BUK7Y35-55B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 4
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source
avalanche energy
repetitive drain-source
avalanche energy
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
I
D
= 28.43 A; V
sup
≤
55 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
see
Figure 3
[1][2][3]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Max
55
55
20
28.43
20.1
113
60
175
175
28.43
113
33
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
T
mb
= 25 °C; t
p
≤
10 µs; pulsed;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
E
DS(AL)R
-
-
-
J
[1]
[2]
[3]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
BUK7Y35-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 April 2010
3 of 14
NXP Semiconductors
BUK7Y35-55B
N-channel TrenchMOS standard level FET
30
I
D
(A)
003aac520
120
P
der
(%)
80
03na19
20
10
40
0
0
50
100
150
200
T
mb
(°C)
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
10
2
I
AL
(A)
10
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aac499
(1)
1
(2)
(3)
10
-1
10
-2
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
Fig 3.
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK7Y35-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 April 2010
4 of 14
NXP Semiconductors
BUK7Y35-55B
N-channel TrenchMOS standard level FET
10
3
I
D
(A)
Limit R
DSon
= V
DS
/ I
D
10
2
003aac620
10μ s
10
100μ s
DC
1
1ms
10ms
100ms
10
-1
1
10
V
DS
(V)
10
2
Fig 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
see
Figure 5
Min
-
Typ
-
Max
2.53
Unit
K/W
10
Z
th (j-mb)
(K/W)
δ
= 0.5
1
0.2
0.1
003aac483
10
-1
0.05
0.02
single shot
P
δ
=
t
p
T
t
p
T
t
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
1
Fig 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
BUK7Y35-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 April 2010
5 of 14
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