BTA201W series E
1 A Three-quadrant triacs high commutation
Rev. 03 — 13 March 2008
Product data sheet
1. Product profile
1.1 General description
Passivated guaranteed commutation triacs in a surface-mounted plastic package,
intended for interfacing with low-power drivers, including microcontrollers.
1.2 Features
I
Suitable for interfacing with low-power
drivers, including microcontrollers
I
SOT223 surface mounted
1.3 Applications
I
Motor control
I
Solenoid drivers
1.4 Quick reference data
I
I
I
I
I
TSM
≤
12.5 A
I
T(RMS)
≤
1 A
V
DRM
≤
600 V (BTA201W-600E)
V
DRM
≤
800 V (BTA201W-800E)
I
I
I
I
I
GT
≤
10 mA (BTA201W-600E)
I
GT
≤
10 mA (BTA201W-800E)
I
GT
≥
1 mA (BTA201W-600E)
I
GT
≥
1 mA (BTA201W-800E)
2. Pinning information
Table 1.
Pin
1
2
3
4
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
main terminal 2 (T2)
1
2
3
4
T2
sym051
Simplified outline
Symbol
T1
G
SOT223
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
3. Ordering information
Table 2.
Ordering information
Package
Name
BTA201W-600E
BTA201W-800E
SC-73
Description
plastic surface-mounted package with increased heatsink; 4 leads
Version
SOT223
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
Conditions
BTA201W-600E
BTA201W-800E
full sine wave; T
sp
≤
106
°C;
see
Figure 4
and
5
full sine wave; T
j
= 25
°C
prior to
surge; see
Figure 2
and
3
t = 20 ms
t = 16.7 ms
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
[1]
[1]
Min
-
-
-
Max
600
800
1
Unit
V
V
A
-
-
-
-
-
-
12.5
13.7
0.78
100
2
5
0.1
+150
125
A
A
A
2
s
A/µs
A
W
W
°C
°C
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
t
p
= 10 ms
I
TM
= 1.5 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
over any 20 ms period
-
−40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/µs.
BTA201W_SER_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 13 March 2008
2 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
1.5
α
003aab299
P
tot
(W)
α
α
= 180°
120°
90°
60°
30°
1.0
0.5
0.0
0
0.2
0.4
0.6
0.8
1
I
T(RMS)
(A)
1.2
α
= conduction angle
Fig 1.
16
I
TSM
(A)
12
Total power dissipation as a function of RMS on-state current; maximum values
001aag959
8
I
T
4
I
TSM
t
T
T
j(init)
= 25
°C
max
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA201W_SER_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 13 March 2008
3 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
10
3
I
T
I
TSM
(A)
001aag958
I
TSM
t
T
T
j(init)
= 25
°C
max
(1)
10
2
10
10
−5
10
−4
10
−3
10
−2
t
p
(s)
10
−1
t
p
≤
20 ms
(1) dI
T
/dt limit
Fig 3.
Non-repetitive peak on-state current as a function of pulse width; maximum values
001aag963
6
I
T(RMS)
(A)
4
1.2
I
T(RMS)
(A)
1.0
001aag964
0.8
0.6
2
0.4
0.2
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
T
sp
(°C)
150
f = 50 Hz; T
sp
= 106
°C
Fig 4.
RMS on-state current as a function of surge
duration; maximum values
Fig 5.
RMS on-state current as a function of solder
point temperature; maximum values
BTA201W_SER_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 13 March 2008
4 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
5. Thermal characteristics
Table 4.
Symbol
R
th(j-sp)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
Conditions
see
Figure 6
minimum footprint; see
Figure 14
for pad area; see
Figure 15
[1]
[1]
Min
-
-
-
Typ
-
156
70
Max
15
-
-
Unit
K/W
K/W
K/W
[1]
Mounted on a printed-circuit board.
10
2
Z
th(j-sp)
(K/W)
10
001aag969
(1)
1
(2)
P
10
−1
10
−2
t
p
t
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
(1) Unidirectional
(2) Bidirectional
Fig 6.
Transient thermal impedance from junction to solder point as a function of pulse width
BTA201W_SER_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 13 March 2008
5 of 13
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