UNISONIC TECHNOLOGIES CO., LTD
4N60
4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
4N60
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
Power MOSFET
1
1
TO-220
TO-220F
1
1
TO-220F1
TO-220F2
FEATURES
* R
DS(ON)
= 2.5Ω @V
GS
= 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer CAPACITANCE ( C
RSS
= typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
1
1
TO-251
TO-252
SYMBOL
1
1
TO-263
TO-262
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N60L-TA3-T
4N60G-TA3-T
4N60L-TF1-T
4N60G-TF1-T
4N60L-TF2-T
4N60G-TF2-T
4N60L-TF3-T
4N60G-TF3-T
4N60L-TM3-T
4N60G-TM3-T
4N60L-TN3-R
4N60G-TN3-R
4N60L-TN3-T
4N60G-TN3-T
4N60L-T2Q-T
4N60G-T2Q-T
4N60L-TQ3-R
4N60G-TQ3-R
4N60L-TQ3-T
4N60G-TQ3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
TO-252
TO-262
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-061,Q
4N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
4.4
A
4.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
16
A
260
mJ
Single Pulsed 4N60
E
AS
(Note 3)
Avalanche Energy
4N60-E
200
mJ
Repetitive (Note 2)
E
AR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
106
TO-220F/TO-220F1
36
Power Dissipation
P
D
W
TO-220F2
38
TO-251/ TO-252
50
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4.4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2
TO-251/ TO-252
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2
TO-251/ TO-252
SYMBOL
θ
JA
RATINGS
62.5
62.5
62.5
83
1.18
3.47
3.28
2.5
UNIT
°С/W
Junction to Case
θ
Jc
°С/W
UNISONIC TECHNOLOGIES CO., LTD
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2 of 8
QW-R502-061,Q
4N60
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
Power MOSFET
MIN TYP MAX UNIT
600
V
10
μA
100 nA
-100 nA
V/°С
4.0
2.5
670
90
11
35
100
60
80
20
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
GS
= 0V, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
Forward
V
GS
= 30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 300V, I
D
= 4.0A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 480V,I
D
= 4.0A,
Gate-Source Charge
Q
GS
V
GS
= 10V (Note 1, 2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 4.4A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 4.4A,
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
0.6
2.0
2.2
520
70
8
13
45
25
35
15
3.4
7.1
1.4
4.4
17.6
250
1.5
UNISONIC TECHNOLOGIES CO., LTD
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3 of 8
QW-R502-061,Q
4N60
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-061,Q
4N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-061,Q
stm32/stm8
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