UNISONIC TECHNOLOGIES CO., LTD
4N50
Preliminary
Power MOSFET
4A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
4N50
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC
4N50
is generally applied in high efficiency switch mode
power supplies, active power factor correction and electronic lamp
ballasts based on half bridge topology.
1
TO-252
1
TO-220
FEATURES
* R
DS(ON)
=2.2Ω @ V
GS
=10V
* High Switching Speed
* 100% Avalanche Tested
1
TO-220F
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N50L-TA3-T
4N50G-TA3-T
4N50L-TF3-T
4N50G-TF3-T
4N50L-TN3-R
4N50G-TN3-R
Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
TO-220F
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Note:
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Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-525.c
4N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
±30
V
Continuous (T
C
=25°C)
I
D
4
A
Drain Current
16 (Note 2)
A
Pulsed (Note 3)
I
DM
Avalanche Current (Note 3)
I
AR
4
A
Single Pulsed (Note 4)
E
AS
216
mJ
Avalanche Energy
8.5
mJ
Repetitive (Note 3)
E
AR
Peak Diode Recovery dv/dt (Note 5)
dv/dt
4.5
V/ns
TO-220
85
TO-220F
Power Dissipation
W
28
TO-252
52
P
D
TO-220
0.67
TO-220F
W/°C
Derate above 25°C
0.22
TO-252
0.41
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 27mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
5. I
SD
≤
4A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F
TO-252
TO-220
TO-220F
TO-252
SYMBOL
θ
JA
RATINGS
62.5
62.5
110
1.47
4.5
2.4
UNIT
°C/W
Junction to Case
θ
JC
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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4N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=500V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=2A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=400V, I
D
=4A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=250V, I
D
=4A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=4A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
I
S
=4A, V
GS
=0V,
dI
F
/dt=100A/µs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
500
V
25
µA
+100 nA
-100 nA
4.0
2.2
650
90
8
15
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
2.0
1.6
485
65
5
11
3
5
14
21
27
20
38
52
64
50
4
16
1.6
36
33
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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4N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
V
GS
Switching Waveforms
10V
Q
GS
Q
G
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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4N50
D.U.T.
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-525.c
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