4N32X3,-2,-1
4N32-3,-2,-1
LOW INPUT CURRENT
PHOTODARLINGTON OPTICALLY
COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 2 available lead form : -
- STD
- G form
VDE 0884 in SMD approval pending
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EN60950 approved by SETI,
reg. no. 157786-18
DESCRIPTION
The 4N32-3,-2,-1 series of optically coupled
isolators consist of an infrared light emitting
diode and NPN silicon photodarlington in a
space efficient dual in line plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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Low input current 0.25mA I
F
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High CurrentTransfer Ratio (200% min)
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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High BV
CEO
(55V min)
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All electrical parameters 100% tested
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Custom electrical selections available
2.54
6.4
6.2
1.54
8.8
8.4
1
2
3
Dimensions in mm
6
5
4
7.8
7.4
4.3
4.1
0.5
0.3
0.5
3.3
9.6
8.4
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
80mA
10V
105mW
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
OPTIONSM
SURFACEMOUNT
OPTION G
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
55V
6V
150mW
5.08
max.
1.2
0.6
1.4
0.9
0.26
10.16
Total Power Dissipation
250mW
(derate linearly 3.3mW/°C above 25°C)
10.2
9.5
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
30/7/97
ISOCOM INC
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Tel: (972) 423-5521
Fax: (972) 422-4549
DB91023-AAS/A3
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
Collector-base Breakdown (BV
CBO
)
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (Note 2
)
4N32-3
MIN TYP MAX UNITS
1.2
10
10
55
55
6
100
1.4
V
V
µA
V
V
V
nA
TEST CONDITION
I
F
= 20mA
I
R
= 10µA
V
R
= 10V
I
C
= 1mA (note 2)
I
C
= 100µA
I
E
= 100µA
V
CE
= 10V
0.25mA I
F
, 1.0V V
CE
0.5mA I
F
, 1.0V V
CE
1.0mA I
F
, 1.0V V
CE
.
0.5mA I
F
, 1.0V V
CE
1.0mA I
F
, 1.0V V
CE
.
1.0mA I
F
, 1.0V V
CE
.
0.25mA I
F
, 0.5mA I
C
0.5mA I
F
, 2mA I
C
1.0mA I
F
, 8mA I
C
(note 1)
(note 1)
V
IO
= 500V (note 1)
V
CE
= 2V ,
I
C
= 10mA, R
L
= 100Ω
Output
Coupled
200
400
800
400
800
%
%
%
%
%
%
V
V
V
V
RMS
V
PK
Ω
µs
µs
4N32-2
4N32-1
800
Collector-emitter Saturation Voltage -3
-2
-1
Input to Output Isolation Voltage V
ISO
5300
7500
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time tr
60
Output Fall Time tf
53
1.0
1.0
1.0
300
250
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
30/7/97
DB91023-AAS/A3
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
10
150
Collector current I
C
(mA)
8
6
4
2
0
-30
0
25
50
75
100
125
0
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
100
80
Forward current I
F
(mA)
Relative current transfer ratio
1.5
Collector Current vs.
Collector-emitter Voltage
I
F
= 1.0mA
T
A
= 25°C
100
I
F
= 0.5mA
50
I
F
= 0.25mA
0
1
2
3
4
5
Collector-emitter voltage V
CE
( V )
Relative Current Transfer Ratio
vs. Ambient Temperature
I
F
= 1mA
V
CE
= 1V
60
1.0
40
20
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
0.5
0
-30
0
25
50
75
Ambient temperature T
A
( °C )
100
Current Transfer Ratio vs. Forward Current
1200
Collector-emitter saturation voltage V
CE(SAT)
(V)
I
F
= 1mA
I
C
= 8mA
Current transfer ratio CTR (%)
1000
800
600
400
200
0
0.1
0.2
0.5
1
2
Forward current I
F
(mA)
5
V
CE
= 1V
T
A
= 25 °C
30/7/97
DB91023-AAS/A3
微控制器 MCU
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