4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
September 2009
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
General Purpose 6-Pin Photodarlington Optocoupler
Features
■
High sensitivity to low input drive current
■
Meets or exceeds all JEDEC Registered
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and
TIL113M have a gallium arsenide infrared emitter
optically coupled to a silicon planar photodarlington.
Specifications
■
UL, C-UL approved,
File #E90700, Volume 2
■
IEC 60747-5-2 approved (ordering option V)
Applications
■
Low power logic circuits
■
Telecommunications equipment
■
Portable electronics
■
Solid state relays
■
Interfacing coupling systems of different potentials
and impedances
Schematic
ANODE 1
6 BASE
6
1
CATHODE 2
5 COLLECTOR
6
1
N/C 3
4 EMITTER
6
1
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M
Rev. 1.0.3
www.fairchildsemi.com
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified.)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute
maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
I
F
(pk)
P
D
DETECTOR
BV
CEO
BV
CBO
BV
ECO
P
D
I
C
Storage Temperature
Operating Temperature
Parameter
Value
-50 to +150
-40 to +100
260 for 10 sec
250
3.3
80
3
3.0
150
2.0
30
30
5
150
2.0
150
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
V
V
V
mW
mW/°C
mA
Lead Solder Temperature (Wave)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Continuous Forward Current
Reverse Voltage
Forward Current – Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Continuous Collector Current
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M
Rev. 1.0.3
www.fairchildsemi.com
2
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
EMITTER
V
F
Input Forward Voltage*
I
F
= 10mA
4NXXM
H11B1M,
TIL113M
I
R
Reverse Leakage Current*
V
R
= 3.0V
V
R
= 6.0V
C
BV
CEO
Capacitance*
V
F
= 0V, f = 1.0MHz
4NXXM
H11B1M,
TIL113M
All
4NXXM,
TIL113M
H11B1M
BV
CBO
BV
ECO
Collector-Base Breakdown Voltage*
I
C
= 100µA, I
E
= 0
All
4NXXM
H11B1M,
TIL113M
I
CEO
Collector-Emitter Dark Current*
V
CE
= 10V, Base Open
All
Emitter-Collector Breakdown Voltage* I
E
= 100µA, I
B
= 0
30
25
30
5.0
7
0.8
1.2
1.2
0.001
0.001
150
60
60
100
10
10
1
100
nA
V
V
1.5
1.5
100
10
pF
V
µA
V
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
DETECTOR
Collector-Emitter Breakdown Voltage* I
C
= 1.0mA, I
B
= 0
Transfer Characteristics
Symbol
I
C(CTR)
Parameter
Collector Output Current*
(1, 2)
Test Conditions
I
F
= 10mA, V
CE
= 10V,
I
B
= 0
Device
4N32M,
4N33M
4N29M,
4N30M
Min.
50 (500)
10 (100)
5 (500)
30 (300)
Typ.
Max.
Unit
mA (%)
DC CHARACTERISTICS
I
F
= 1mA, V
CE
= 5V
I
F
= 10mA, V
CE
= 1V
V
CE(SAT)
Saturation Voltage*
(2)
H11B1M
TIL113M
4NXXM
TIL113M
H11B1M
4NXXM,
TIL113M
H11B1M
4N32M,
4N33M,
TIL113M
4N29M,
4N30M
I
F
= 8mA, I
C
= 2.0mA
I
F
= 1mA, I
C
= 1mA
1.0
1.25
1.0
5.0
25
100
V
AC CHARACTERISTICS
t
on
Turn-on Time
I
F
= 200mA, I
C
= 50mA,
V
CC
= 10V, R
L
= 100
Ω
I
F
= 10mA, V
CE
= 10V,
R
L
= 100
Ω
t
off
Turn-off Time
I
F
= 200mA, I
C
= 50mA,
V
CC
= 10V, R
L
= 100
Ω
µs
µs
40
18
30
kHz
I
F
= 10mA, V
CE
= 10V,
R
L
= 100
Ω
BW
Bandwidth
(3, 4)
H11B1M
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M
Rev. 1.0.3
www.fairchildsemi.com
3
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.) (Continued)
Isolation Characteristics
Symbol
V
ISO
Characteristic
Test Conditions
VDC
VDC
Device
All
4N32M*
4N33M*
All
All
Min.
7500
2500
1500
10
11
Typ.
Max.
Units
V
AC
PEAK
V
Ω
Input-Output Isolation Voltage
(5)
f = 60Hz, t = 1 sec.
R
ISO
C
ISO
Isolation Resistance
(5)
Isolation Capacitance
(5)
V
I-O
= 500VDC
V
I-O
= Ø, f = 1MHz
0.8
pF
* Indicates JEDEC registered data.
Notes:
1. The current transfer ratio(I
C
/I
F
) is the ratio of the detector collector current to the LED input current.
2. Pulse test: pulse width = 300µs, duty cycle
≤
2.0% .
3. I
F
adjusted to I
C
= 2.0mA and I
C
= 0.7mA rms.
4. The frequency at which I
C
is 3dB down from the 1kHz value.
5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
Max.
Unit
I-IV
I-IV
55/100/21
2
175
1594
V
peak
CTI
V
PR
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
V
peak
V
IORM
V
IOTM
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
850
6000
7
7
0.5
10
9
V
peak
V
peak
mm
mm
mm
Ω
RIO
Insulation Resistance at Ts, V
IO
= 500V
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M
Rev. 1.0.3
www.fairchildsemi.com
4
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Typical Performance Curves
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.6
V
CE
= 5.0V
T
A
= 25°C
Normalized to
I
F
= 10 mA
Fig. 2 Normalized CTR vs. Forward Current
1.7
1.4
V
F
- FORWARD VOLTAGE (V)
1.6
1.2
1.5
NORMALIZED CTR
1.0
1.4
T
A
= -55°C
0.8
1.3
T
A
= 25°C
1.2
T
A
= 100°C
1.1
0.6
0.4
0.2
1.0
1
10
100
0.0
0
2
4
6
8
10
12
14
16
18
20
I
F
- LED FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
1.0
Fig. 4 CTR vs. RBE (Unsaturated)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
0.9
0.8
I
F
= 10 mA
0.7
I
F
= 5 mA
0.6
0.5
0.4
0.3
0.2
V
CE
= 5.0 V
0.1
0.0
I
F
= 20 mA
1.2
I
F
= 5 mA
NORMALIZED CTR
1.0
I
F
= 10 mA
0.8
0.6
I
F
= 20 mA
0.4
Normalized to
I
F
= 10 mA
T
A
= 25°C
0.2
-60
-40
-20
0
20
40
60
80
100
10
100
1000
T
A
- AMBIENT TEMPERATURE (°C)
R
BE
- BASE RESISTANCE (kΩ)
Fig. 5 CTR vs. RBE (Saturated)
1.0
100
Fig. 6 Collector-Emitter Saturation Voltage
vs. Collector Current
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
0.9
V
CE (SAT)
- COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
V
CE
= 0.3 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
100
1000
I
F
= 5 mA
I
F
= 10 mA
I
F
= 20 mA
T
A
= 25˚C
10
1
I
F
= 2.5 mA
0.1
0.01
I
F
= 5 mA
I
F
= 10 mA
I
F
= 20 mA
0.001
0.01
0.1
1
10
R
BE
- BASE RESISTANCE (k
Ω)
I
C
- COLLECTOR CURRENT (mA)
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M
Rev. 1.0.3
www.fairchildsemi.com
5
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