1N6642U
Aerospace 0.3 A - 100 V switching diode
Features
■
■
■
■
■
■
■
Surface mount hermetic package
High thermal conductivity materials
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop
Target radiation qualification:
– 150 krad (Si) low dose rate
– 3 Mrad high dose rate
Package weight: 0.12 g
A
K
K
A
LCC-2D
■
Description
This power ultrafast recovery rectifier is designed
and packaged to comply with the ESCC5000
specification for aerospace products. It is housed
in a surface mount hermetically sealed LCC-2D
package whose footprint is 100% compatible with
industry standard solutions in D5A.
The 1N6642U is suitable for switching mode
power supplies and high frequency DC to DC
converters such as low voltage high frequency
inverter, free wheeling or polarity protection.
Table 1.
Device summary
(1)
ESCC detailed
specification
-
5101/026/xx
Quality level
Engineering
model
Flight part
EPPL
-
0.3 A
Target
100 V
175 °C
1.2 V
I
F(AV)
V
RRM
T
j(max)
V
F (max)
Order code
1N6642UD1
1N6642U02D
1. Contact ST sales office for information about the specific conditions for products in die form and gold plated version.
September 2011
Doc ID 16972 Rev 2
1/7
www.st.com
7
Characteristics
1N6642U
1
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
T
sol
Characteristics
Absolute ratings (limiting values)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward rectified current
(1)
Forward surge current
Storage temperature range
Operating junction temperature range
Maximum soldering temperature
(2)
t
p
= 8.3 ms sinusoidal,
t
amb
≤
25 °C
Value
100
0.5
300
2
-65 to +175
-65 to +175
245
Unit
V
A
mA
A
°C
°C
°C
1. For all variants at T
c
≥
+155 °C per diode, derate linearly to 0 A at +175 °C.
2. Maximum duration 5 s. The same package must not be re-soldered until 3 minutes have elapsed.
Table 3.
Symbol
R
th (j-c)
R
th (j-a)
Thermal resistance
Parameter
Junction to case
(1)
Junction to ambient
Value
60
280
Unit
°C/W
1. Package mounted on infinite heatsink
Table 4.
Symbol
V
BR (1)
Static electrical characteristics
Parameter
Breakdown voltage
Tests conditions
T
j
= 25 °C
T
j
= 25 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25
°C
T
j
= 25
°C
T
j
= 150
°C
T
j
= -55
°C
I
R
= 100 µA
V
R
= 20 V
V
R
= 75 V
V
R
= 20 V
V
R
= 75 V
I
F
= 10 mA
I
F
= 100 mA
I
F
= 10 mA
I
F
= 100 mA
Min.
100
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
25
50
30
40
800
1200
800
1200
mV
Unit
V
nA
nA
µA
µA
I
R
(1)
Reverse current
V
F (2)
Forward voltage
1. Pulse test: tp = 10 ms,
δ
< 2%
2. Pulse test: tp = 680 µs,
δ
< 2%
To evaluate the conduction losses use the following equation:
P = 0.74 x I
F(AV)
+ 1.00 x I
F2(RMS )
2/7
Doc ID 16972 Rev 2
1N6642U
Table 5.
Symbol
t
rr
V
FP
t
FR
C
j
Characteristics
Dynamic characteristics
Parameter
Reverse recovery time
Forward recovery voltage
Forward recovery time
Diode capacitance
Test conditions
I
F
= I
R
= 10 mA
(1)
I
F
= 1 A, V
r
= 30 V, dI/dt = -15 A/µs
I
FM
= 200 mA
I
FM
= 200 mA
V
R
= 0 V, V = 50 mV, F = 1 MHz
V
R
= 1.5 V, V = 50 mV, F = 1 MHz
-
-
-
-
-
-
-
-
Min. Typ. Max. Unit
-
-
9
ns
20
5
20
5
2.8
V
ns
pF
pF
1. Guaranteed but not tested
Figure 1.
I
FM
(A)
Forward voltage drop versus
forward current (typical values)
Figure 2.
I
FM
(A)
1.2
Forward voltage drop versus
forward current (maximum values)
1.2
1.0
1.0
0.8
0.8
0.6
T
j
=150 °C
0.6
T
j
=150 °C
0.4
T
j
=25 °C
T
j
=-55 °C
0.4
T
j
=25 °C
T
j
=-55 °C
0.2
0.2
V
FM
(V)
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
FM
(V)
1.8
2.0
Doc ID 16972 Rev 2
3/7
Characteristics
1N6642U
Figure 3.
Reverse leakage current versus
reverse voltage applied
(typical values)
Figure 4.
Relative variation of thermal
impedance, junction to case,
versus pulse duration
1.E+03
I
R
(nA)
1.0
0.9
T
j
=150 °C
Z
th
(j-c)
/R
th(j-c)
0.8
0.7
0.6
1.E+02
1.E+01
T
j
=75 °C
0.5
0.4
0.3
Single pulse
1.E+00
T
j
=25 °C
0.2
1.E-01
0
10
20
30
40
50
60
70
80
90
V
R
(V)
100
110
0.1
0.0
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
t
P
(s)
1.E+00
Figure 5.
Junction capacitance versus reverse voltage applied (typical values)
10.0
C(pF)
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
1.0
V
R
(V)
0.1
1
10
100
4/7
Doc ID 16972 Rev 2
1N6642U
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Table 6.
Leadless chip carrier 2 (LCC-2D) package dimensions
Dimensions
Ref.
Millimeters
Min.
A
(1)
A
B
D
Note 1
Inches
Min.
Typ.
Max.
Typ. Max.
2.03
4.57
1.97
1.70
-
1.3
1.67
0.37
0.15
0.15
0.20
2.20
4.77
2.10
1.87
0.71
-
-
-
-
-
-
1.86
4.44
1.84
1.53
0.48
-
-
-
-
-
-
0.073 0.080 0.087
0.175 0.180 0.188
0.072 0.078 0.083
0.060 0.067 0.074
0.019
-
-
-
-
-
-
-
0.051
0.066
0.015
0.006
0.006
0.008
0.028
-
-
-
-
-
-
B
C
2
C
1
F
Pin 2 Cathode
Pin 1 Anode
Note 1
D
E
E
Note 1
E
F
H
1
2
r1
G
G
H
I
r1
r2
I
r2
Note 1: The anode is identified by metallization in two top internal angles and the index mark.
1. Measurement prior to solder coating the mounting pads on bottom of package
Doc ID 16972 Rev 2
5/7
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