UNISONIC TECHNOLOGIES CO., LTD
1N65
1.2A, 650V N-CHANNEL
POWER MOSFET
1
1
TO-92
Power MOSFET
DESCRIPTION
The UTC
1N65
is a high voltage power MOSFET and is designed
to have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in the high speed
switching applications of power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
SOT-223
1
TO-220
TO-220F
FEATURES
* R
DS(ON)
=12.5Ω@V
GS
= 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
1
TO-251
1
TO-252
1
SYMBOL
TO-126
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N65L-AA3-R
1N65G-AA3-R
1N65L-T92-B
1N65G-T92-B
1N65L-T92-K
1N65G-T92-K
1N65L-T92- R
1N65G-T92- R
1N65L-TA3-T
1N65G-TA3-T
1N65L-TF3-T
1N65G-TF3-T
1N65L-TM3-T
1N65G-TM3-T
1N65L-TN3-R
1N65G-TN3-R
1N65L-TN3-T
1N65G-TN3-T
1N65L-T60-K
1N65G-T60-K
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-223
TO-92
TO-92
TO-92
TO-220
TO-220F
TO-251
TO-252
TO-252
TO-126
1
G
G
G
G
G
G
G
G
G
G
Pin Assignment
2
D
D
D
D
D
D
D
D
D
D
3
S
S
S
S
S
S
S
S
S
S
Packing
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Bulk
Tape Reel
Tube
Tube
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Tape Reel
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Bulk
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1 of 6
QW-R502-579.B
1N65
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Single Pulsed (Note 3)
Avalanche Energy
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
SOT-223
TO-251/ TO-252
TO-220
Power Dissipation
TO-220F
TO-92(T
A
=25℃)
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
E
AS
E
AR
dv/dt
Power MOSFET
RATINGS
UNIT
650
V
±30
V
1.2
A
1.2
A
4.8
A
50
mJ
4.0
mJ
4.5
V/ns
1
W
28
W
40
W
P
D
21
W
1
W
TO-126
12.5
W
Junction Temperature
T
J
+150
℃
℃
Operating Temperature
T
OPR
-55 ~ +150
Storage Temperature
T
STG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
1.2A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
SOT-223
TO-251/ TO-252
TO-220/ TO-220F
Junction to Ambient
TO-92
TO-126
SOT-223
TO-251/ TO-252
TO-220
TO-220F
TO-126
SYMBOL
RATINGS
150
110
62.5
140
132
14
4.53
3.13
5.95
10
UNIT
θ
JA
℃/W
Junction to Case
θ
Jc
℃/W
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2 of 6
QW-R502-579.B
1N65
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
Power MOSFET
MIN TYP MAX UNIT
650
V
10
μA
100 nA
-100 nA
0.4
V/℃
4.0
9.5 12.5
120 150
20
25
3.0 4.0
5
25
7
25
5.0
1.0
2.6
20
60
25
60
6.0
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
Forward
Reverse
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=0.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=325V, I
D
=1.2A,
R
G
=50Ω (Note 2,3)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=520V, V
GS
=10V,
Gate-Source Charge
Q
GS
I
D
=1.2A (Note 2,3)
Gate-Drain Charge
Q
GD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=1.2A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=1.2A
dI
F
/dt=100A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width
≤300μs,
Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
V
GS
=0V, I
D
=250μA
V
DS
=650V, V
GS
=0V
V
GS
=30V, V
DS
=0V
I
GSS
V
GS
=-30V, V
DS
=0V
△BV
DSS
/
△
T
J
I
D
=250μA
2.0
1.4
1.2
4.8
160
0.3
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3 of 6
QW-R502-579.B
1N65
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4 of 6
QW-R502-579.B
1N65
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circui
Unclamped Inductive Switching Waveformst
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5 of 6
QW-R502-579.B
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