Naina Semiconductor Ltd.
emiconductor
Schottky Barrier Rectifier Diode
Features
•
Fast Switching
•
Low forward voltage drop, V
F
•
Guard ring protection
•
High surge capacity
•
High efficiency, low power loss
1N6391
1
Electrical Ratings
(T
C
= 25
0
C, unless otherwise noted)
Parameter
Repetitive peak reverse voltage
DC blocking voltage
Non-repetitive peak reverse
voltage
Average rectified forward current
0
(T
C
= 85 C)
Non-repetitive peak surge current
(surge applied at rated load
conditions, halfwave, single phase,
60 Hz
Symbol
V
RRM
45
V
DC
V
RSM
I
F(AV)
54
25
V
A
DO-203AA (DO
203AA (DO-4)
Values
Units
V
I
FSM
600
A
Maximum Ratings
(T
C
= 25
0
C, unless otherwise noted)
Parameter
Maximum instantaneous forward voltage
Test Conditions
I
F
= 5 A
I
F
= 50 A
T
C
= 125 C
Maximum instantaneous reverse current at rated DC voltage
T
C
= 100 C
O
O
Symbol
V
F
Values
0.44
0.78
40
Units
V
V
mA
mA
I
R
400
Thermal & Mechanical Specifications
(T
E
= 25
0
C, unless otherwise noted)
Parameters
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature
Mounting torque (non-lubricated threads)
Approximate allowable weight
Symbol
R
th(JC)
T
J
T
stg
W
Values
2.0
-65 to +125
65
-65 to +125
65
15
45.6
Units
0
C/W
0
C
0
C
in-lb
g
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