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1N6376

产品描述1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
产品类别分立半导体    二极管   
文件大小103KB,共2页
制造商New Jersey Semiconductor
官网地址http://www.njsemi.com
下载文档 详细参数 选型对比 全文预览

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1N6376概述

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

1N6376规格参数

参数名称属性值
厂商名称New Jersey Semiconductor
Reach Compliance Codeunknow

文档预览

下载PDF文档
tSs.mi-Conclu.cto'i ^Pioducti, Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
TRANSZORB® Transient Voltage Suppressors
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
FEATURES
• Glass passivated chip junction
• Available
in
uni-directional
and
bi-directional
• 1500 W peak pulse power capability
with a 10/1000 u.s waveform, repetitive
rate (duty cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
PRIMARY CHARACTERISTICS
V
WM
5.0 V to 18V
1500W
PpPM
PD
'FSM
Tj max.
6.5 W
200 A
175°C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
P
PPM
LIMIT
1500
UNIT
W
A
W
A
V
Peak pulse power dissipation with a 10/1000 us waveform '
1
' (fig. 1)
Peak pulse current with a 10/1000 us waveform
(1)
(fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only '
2
*
Maximum instantaneous forward voltage at 100 A (or uni-directional only
Operating junction and storage temperature range
Notes
''' Non-repetitive current pulse, per fig. 3 and derated above T
A
= 25 °C per fig. 2
'
2
' 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
'PPM
PD
'FSM
V
F
TJ.
T
STG
See next table
6.5
200
3.5
- 5 5 t o + 175
•c
N.I .Semi-C ('Dilution reserves the right to change lest conditions, parameter limits und package dimensions without notice
Information lumuhed by NJ Scmi-Cunducton is believed to he htilh accurate and reliable
M
the lime of going to press. However '
Scini-t oiidutiiirs iv-uincs mi reiptmsibilify tnr my errors »r uirmsitmi discovered in its u.se NJ Semi-loiidiiitiT* en
ir.ti ii'iTS hi
vcrilv ih.it il.'ila^htcij ire current hefbre plnciim urden

1N6376相似产品对比

1N6376 1N6374 1N6375 1N6377 1N6378 1N6383 1N6384 1N6385 1N6386 ICTE5
描述 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow unknow unknown
厂商名称 New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor - New Jersey Semiconductor
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