· Underwriters Laboratory recognition under UL standard
for safety 497B : Isolated loop circuit protection
· Glass passivated junction
· 1500W peak pulse power capability on 10/1000μS
waveform, repetition rate(duty cycle) : 0.05%
· Excellent clamping capability
· Low incremental surge resistance
· Very fast response time
· Includes 1N6267 thru 1N6303A
POWER 1500Watts
VOLTAGE 6.8 to 440 Volts
DO-201AD
0.210(5.3)
0.188(4.8)
DIA.
1.0(25.4)
MIN.
Mechanical Data
· Case : JEDEC DO-201AD molded plastic body
over passivated junction
· Terminals : Solder plated axial leads, solderable per
MIL-STD-750, method 2026
· High temperature soldering guaranteed : 265
℃
/10 seconds,
0.375"(9.5mm) lead length, 5lbs. (2.3Kg) tension
· Polarity : For uni-directional types the color band denotes
cathode, which is positive with respect to the
anode under normal TVS operation
· Mounting Position : Any
· Weight : 0.042 ounce, 0.18 gram
· Flammability : Epoxy is rated UL 94V-0
0.375(9.5)
0.285(7.2)
0.042(1.1)
0.037(0.9)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Devices For Bidirectional Applications
· For bi-directional use C or CA suffix for types 1.5KE6.8 thru types K1.5E440(e.g. 1.5KE6.8C, 1.5KE440CA),
electrical characteristics apply in both directions.
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
Symbols
Peak power dissipation with a 10/1000μS waveform (Note 1. Fig. 1)
Peak pulse current with a 10/1000μS waveform (Note 1)
Steady state power dissipation at T
L
=75℃ lead length 0.375"(9.5mm) (Note2)
Peak forward surge current, 8.3mm single half sine-wave unidirectional only (Note 3)
Maximum instantaneous forward voltage at 100A for unidirectional only (Note4)
Typical thermal resistance junction to lead
Typical thermal resistance junction to ambient
Operating junction and storage temperature range
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
Values
1500
See next table
6.5
200
3.5/5.0
20
75
-55 to +175
Units
Watts
Amps
Watts
Amps
Volts
℃/W
℃/W
℃
Rθ
JL
Rθ
JA
T
J
,T
STG
Notes:
(1) Non repetitive current pulse, per Fig.3 and derated above T
A
=25℃ per Fig.2
(2) Mounted on copper pads area of 1.6×1.6"(40×40mm) per Fig.5
(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulse per minute maximum
(4) V
F
=3.5 Volts for 1.5KE220(A) & below; V
F
=5.0 Volts for 1.5KE250(A) & above
ELECTRICAL CHARACTERISTIC at (TA=25℃ unless other specified)
JEDEC
Type
Number
1N6267
(C )
1N6267
(C )
A
1N6268
(C )
1N6268
(C )
A
1N6269
(C )
1N6269
(C )
A
1N6270
(C )
1N6270
(C )
A
1N6271
(C )
1N6271
(C )
A
1N6272
(C )
1N6272
(C )
A
1N6273
(C )
1N6273
(C )
A
1N6274
(C )
1N6274
(C )
A
1N6275
(C )
1N6275
(C )
A
1N6276
(C )
1N6276
(C )
A
1N6277
(C )
1N6277
(C )
A
1N6278
(C )
1N6278
(C )
A
1N6279
(C )
1N6279
(C )
A
1N6280
(C )
1N6280
(C )
A
1N6281
(C )
1N6281
(C )
A
1N6282
(C )
1N6282
(C )
A
1N6283
(C )
1N6283
(C )
A
1N6284
(C )
1N6284
(C )
A
1N6285
(C )
1N6285
(C )
A
1N6286
(C )
1N6286
(C )
A
1N6287
(C )
1N6287
(C )
A
1N6288
(C )
1N6288
(C )
A
1N6289
(C )
1N6289
(C )
A
1N6290
(C )
1N6290
(C )
A
1N6291
(C )
1N6291
(C )
A
1N6292
(C )
General
Semiconductor
Part
Number
1.5K E 6.8
(C )
1.5K E 6.8
(C )
A
1.5K E 7.5
(C )
1.5K E 7.5
(C )
A
1.5K E 8.2
(C )
1.5K E 8.2
(C )
A
1.5K E 9.1
(C )
1.5K E 9.1
(C )
A
1.5K E 10
(C )
1.5K E 10
(C )
A
1.5K E 11
(C )
1.5K E 11
(C )
A
1.5K E 12
(C )
1.5K E 12
(C )
A
1.5K E 13
(C )
1.5K E 13
(C )
A
1.5K E 15
(C )
1.5K E 15
(C )
A
1.5K E 16
(C )
1.5K E 16
(C )
A
1.5K E 18
(C )
1.5K E 18
(C )
A
1.5K E 20
(C )
1.5K E 20
(C )
A
1.5K E 22
(C )
1.5K E 22
(C )
A
1.5K E 24
(C )
1.5K E 24
(C )
A
1.5K E 27
(C )
1.5K E 27
(C )
A
1.5K E 30
(C )
1.5K E 30
(C )
A
1.5K E 33
(C )
1.5K E 33
(C )
A
1.5K E 36
(C )
1.5K E 36
(C )
A
1.5K E 39
(C )
1.5K E 39
(C )
A
1.5K E 43
(C )
1.5K E 43
(C )
A
1.5K E 47
(C )
1.5K E 47
(C )
A
1.5K E 51
(C )
1.5K E 51
(C )
A
1.5K E 56
(C )
1.5K E 56
(C )
A
1.5K E 62
(C )
1.5K E 62
(C )
A
1.5K E 68
(C )
1.5K E 68
(C )
A
1.5K E 75
(C )
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
Max
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.8
58.8
68.2
65.1
74.8
71.4
82.5
Test
Current
I
T
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
Maximum
Reverse
Leakage
at V
WM
I
D
(4)
(µA)
1000
1000
500
500
200
200
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
139
143
128
133
120
124
109
112
100
103
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
22.1
23.1
20.4
21.4
18.6
19.5
16.9
17.6
15.3
16.3
13.9
Maximum
Clamping
Voltage
at I
PPM
V
C
(V)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
109
Maximum
Temp.
Coefficient
of V
(BR)
(% /¡ C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.089
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
ELECTRICAL CHARACTERISTIC at (TA=25℃ unless other specified)
JEDEC
Type
Number
1N6292
(C )
A
1N6293
(C )
1N6293
(C )
A
1N6294
(C )
1N6294
(C )
A
1N6295
(C )
1N6295
(C )
A
1N6296
(C )
1N6296
(C )
A
1N6297
(C )
1N6297
(C )
A
1N6298
(C )
1N6298
(C )
A
1N6299
(C )
1N6299
(C )
A
1N6300
(C )
1N6300
(C )
A
1N6301
(C )
1N6301
(C )
A
1N6302
(C )
1N6302
(C )
A
1N6303
(C )
1N6303
(C )
A
General
Semiconductor
Part
Number
1.5K E 75
(C )
A
1.5K E 82
(C )
1.5K E 82
(C )
A
1.5K E 91
(C )
1.5K E 91
(C )
A
1.5K E 100
(C )
1.5K E 100
(C )
A
1.5K E 110
(C )
1.5K E 110
(C )
A
1.5K E 120
(C )
1.5K E 120
(C )
A
1.5K E 130
(C )
1.5K E 130
(C )
A
1.5K E 150
(C )
1.5K E 150
(C )
A
1.5K E 160
(C )
1.5K E 160
(C )
A
1.5K E 170
(C )
1.5K E 170
(C )
A
1.5K E 180
(C )
1.5K E 180
(C )
A
1.5K E 200
(C )
1.5K E 200
(C )
A
1.5K E 220
(C )
1.5K E 220
(C )
A
1.5K E 250
(C )
1.5K E 250
(C )
A
1.5K E 300
(C )
1.5K E 300
(C )
A
1.5K E 350
(C )
1.5K E 350
(C )
A
1.5K E 400
(C )
1.5K E 400
(C )
A
1.5K E 440
(C )
1.5K E 440
(C )
A
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
136
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
333
360
380
396
418
Max
78.8
90.2
86.1
100.0
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
484
462
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
Maximum
Reverse
Leakage
at V
WM
I
D
(4)
(µA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
14.6
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
4.4
4.6
4.2
4.4
3.5
3.6
3.0
3.1
2.6
2.7
2.4
2.5
Maximum
Clamping
Voltage
at I
PPM
V
C
(V)
104
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
Maximum
Temp.
Coefficient
of V
(BR)
(% /¡ C)
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Notes : (1)
(2)
(3)
(4)
P uls e tes t: t
p =
50ms
S urge current waveform per F ig. 3 and derate per F ig. 2
All terms and s ymbols are cons is tent with ANS I/IE E E C A62.35
For bidirectional types with V
R
10 volts and les s the I
D
limit is doubled
A pplic ation
¥ T his s eries of S ilicon Trans ient S uppres s ors is us ed in applications where large voltage trans ients can permanently damage voltage-s ens itive components.
¥ T he T V S diode can be us ed in applications where induced lightning on rural or remote trans mis s ion lines pres ents a hazard to electronic circuitry
(ref: R .E .A. s pecification P.E . 60).
¥ T his Trans ient Voltage S uppres s or diode has a puls e power rating of 1500 watts for one millis econd. T he res pons e time of T V S diode clamping action is
effectively ins tantaneous (1 x 10
-9
s econds bidirectional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage s ens itive s emi-
conductors and components. T V S diodes can als o be us ed in s eries or parallel to increas e the peak power ratings.
RATINGS AND CHARACTERISTIC CURVES 1.5KE SERIES AND 1N6267 THRU 1N6303(C)A
Fig. 1Ð P eak P uls e Po wer R ating C ur ve
100
Fig. 2Ð P uls e Derating C ur ve
P eak P uls e P ower (P
P P
) or C urrent (I
P P
)
Derating in P ercentage, %
100
P eak P uls e P ower (kW)
75
10
50
1
P
PPM ,
25
0.1
0.1
μS
1.0
μS
1 0
μS
100
μS
1.0ms
10ms
0
0
25
50
75
100
125
150
o
175
200
t
d ,
P uls e Width (s ec.)
T
A
,
Ambient Temperature ( C )
Fig. 3Ð P uls e Waveform
150
F ig. 4 - Typic al J unc tion C apac itanc e
10,000
P eak P uls e C urrent, % I
R S M
tr = 10
μS
P eak Value
I
P P M
100
C
J
, C apacitance, pF
T
J
= 25 C
P uls e Width (td)
is defined as the point
where the peak current
decays to 50% of I
P P M
o
Unidirectional
B idirectional
V
R
= 0
1,000
Half Value
I
P P M
50
IP P
2
10/1000
μS
W aveform
as defined by R .E .A.
td
100
V
R
= R ated
S tand-off Voltage
f = 1 MHz
V s ig = 50mV p-p
o
T
J
= 25 C
5
10
100
500
I
P P M ,
0
0
1.0
2.0
3.0
4.0
10
t,
Time (ms )
V
(B R )
, B reakdown Voltage (V )
P
M(AV )
, S teady S tate P ower Dissipation (W)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
F ig. 5Ð S teady S tate Power
Derating C ur ve
60 H
Z
R es is tive or
Inductive Load
F ig. 6 - Maximum Non-repetitive Peak F orwar d
S urge C urrent Unidirectional Only
200
P eak F orward S urge C urrent (A)
8.3ms S ingle Half S ine-Wave
(J E DE C Method) T
J
= T
J
max.
100
L = 0.375" (9.5mm)
Lead Lengths
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
C opper Heat S inks
25
50
75
100
125
150
o
10
175
200
1
10
100
T
L
,
Lead Temperature ( C )
Number of C ycles at 60 H
Z
RATINGS AND CHARACTERISTIC CURVES 1.5KE SERIES AND 1N6267 THRU 1N6303(C)A
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
便携式医疗设备的特殊性决定了它们应该是对用户友好的、必须工作在无菌环境下，并且空间占用小、耗能低。 同时，便携式医疗设备还需要足够的计算能力以便处理医疗数据，能够连接到无线或有线接口以便记录和发送数据。从设计人员的角度考虑，上述需求需要低功耗的单片机（MCU）和数字信号控制器（Digital Signal Controller，DSC）。 正是有了嵌入式处理器，设计人员才有可能设...[详细]
意法半导体-低功耗射频
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
