电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N6278

产品描述1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
产品类别半导体    分立半导体   
文件大小123KB,共4页
制造商BILIN
官网地址http://www.galaxycn.com/
下载文档 全文预览

1N6278概述

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

文档预览

下载PDF文档
BL
FEATURES
GALAXY ELECTRICAL
1N6267- - -1N6303A
BREAKDOWN VOLTAGE: 6.8 --- 200 V
PEAK PULSE POWER: 1500 W
TRANSIENT VOLTAGE SUPPRESSOR
Plastic package
has
Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
1500W peak pulse power capability with a 10/1000μs
waveform, repetition rate (duty cycle): 0.05%
Excellent clamping capability
Low incremental surge resistance
Fast response time: typically less than 1.0ps from 0 Volts to
V
(BR)
for uni-directional and 5.0ns for bi-directional types
For devices with V
(BR)
10V,ID are typically less than 1.0μA
/ 10 seconds,
High tem perature soldering guaranteed:265
DO-201AE
0.375"(9.5mm) lead length, 51bs. (2.3kg) tension
MECHANICAL DATA
Case:JEDEC DO-201AE, molded plastic
Polarity: Color band denotes positive end
( cathode ) except for bidirectional
Weight: 0.032 ounces,
0.9
grams
Mounting position: Any
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use C or CA suffix for types 1N6267 thru types 1N6303A (e.g. 1N6267, 1N6303A).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE 1, FIG.1)
Peak pulse current w ith a 10/1000μs w aveform (NOTE 1)
Steady state pow er dissipation at T
L
=75
fffff
lead lengths 0.375"(9.5mm) (NOTE 2)
Peak forw ard surge current, 8.3ms single half
ffffsine-w
ave superimposed on rated load (JEDEC Method) (NOTE 3)
Maximum instantaneous forw ard voltage at
100
A for unidirectional only (NOTE 4)
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
Operating junction and storage temperature range
VALUE
Minimum 1500
SEE TABLE 1
6.5
200.0
3.5/5.0
20
75
-50---+175
UNIT
W
A
W
A
V
/W
/W
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
R
θ
JL
R
θ
JA
T
J
, T
STG
NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T
A
=25 per Fig. 2
(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm
2
) per Fig. 5
(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum
(4) V
F
=3.5 Volt max. for devices of V
(BR)
200V, and V
F
=5.0 Volt max. for devices of V
(BR)
>200V
www.galaxycn.com
Document Number 0285011
BL
GALAXY ELECTRICAL
1.
Access to register of unclocked peripheral at 0x40010C00 cause BUS_FAULT 什么...
同一个原理图,分别装载了  stm32f103test.hex  、10.hex  文件,装载stm32f103test.hex 文件能正常仿真,装载10.hex文件,报错如下:Access to register of unclocked peripheral at 0x ......
csz9981 stm32/stm8
好久不发帖了,晒两张图来刷刷存在感
本帖最后由 shihuntaotie 于 2017-10-11 19:40 编辑 太久没玩电子的东西了,突然想起手里还有大学花大价钱买的破履带底盘一个,本着不浪费的原则,(分明是被家人说玩军模就是玩玩具,浪费钱 ......
shihuntaotie DIY/开源硬件专区
【Silicon Labs 开发套件评测】+资料收集
本帖最后由 dql2016 于 2021-7-25 14:13 编辑 EFM32PG22官方网站提供了很多详细的资料。 PG22 开发套件是适用于 EFM32PG22( 32 位 ARM® Cortex®-M33) 低成本、小封装微控制器的 ......
dql2016 Silicon Labs测评专区
LM3S9B96
在LM3S9B96 的头文件中【399行】,有这样的定义: #define GPIO_PORTF_DATA_R (*((volatile unsigned long *)0x400253FC)) 查看手册后,没有看到这个寄存器!哈哈,大家讨论一下。...
jinhailu2010 微控制器 MCU
win98 多功能卡 驱动
本人做一个多功能卡的驱动(PCI转串/并口),在2000/XP下利用系统内MF.SYS可以创建出多个设备,然后给每个设备安装相应的驱动 但是在WIN98下面,系统没有像MF.SYS这样的驱动可以利用,我想知道WIN98 ......
morancjy 嵌入式系统
MCU性能参数怎么评估?主要从哪几个角度
MCU性能参数怎么评估?主要从哪几个角度 588184 ...
QWE4562009 ARM技术

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 490  1830  690  2200  309  10  37  14  45  7 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved