Naina Semiconductor Ltd.
Schottky Power Diode, 25A
Features
•
•
•
•
•
Fast Switching
Low forward voltage drop
High surge capability
High efficiency, low power loss
Normal and Reverse polarity
1N5829 thru
1N5831R
DO-203AA (DO-4)
Maximum Ratings
(T
J
= 25
o
C, unless otherwise noted)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, half-sine wave
Forward voltage
Reverse current
T
C
≤ 100
o
C
T
C
= 25
o
C
t
p
= 8.3 ms
I
F
= 25 A
T
J
= 25
o
C
V
R
= 20V, T
J
= 25
o
C
V
R
= 20V, T
J
= 125
o
C
Test Conditions
Symbol
V
RRM
V
RMS
V
DC
I
F
I
FSM
V
F
I
R
1N5829(R)
20
14
20
25
800
0.58
2
250
1N5830(R)
25
17
25
25
800
0.58
2
250
1N5831(R)
35
25
35
25
800
0.58
2
250
Units
V
V
V
A
A
V
mA
Thermal & Mechanical Specifications
(T
J
= 25
o
C, unless otherwise noted)
Parameters
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature
Mounting torque (non-lubricated threads)
Approximate allowable weight
Symbol
R
th(JC)
T
J
T
stg
F
W
1N5829(R)
1N5830(R)
1.8
-55 to 150
-55 to 175
2.0
5.0
1N5831(R)
Units
o
C/W
o
C
o
C
Nm
g
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
Naina Semiconductor Ltd.
Package Outline
1N5829 thru
1N5831R
ALL DIMENSIONS IN MM
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
嵌入式系统
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