1N5822U
Aerospace 40 V power Schottky rectifier
Features
■
■
■
■
■
■
■
■
■
Aerospace applications
Surface mount hermetic package
High thermal conductivity materials
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop
Package weight: 0.18 g
Target radiation qualification
– 150 krad (Si) low dose rate
– 3 Mrad (Si) high dose rate
ESCC qualified
A
K
K
A
LCC2B
Description
This power Schottky rectifier is designed and
packaged to comply with the ESCC5000
specification for aerospace products. It is housed
in a surface mount hermetically sealed LCC2B
package whose footprint is 100% compatible with
industry standard solutions in D5B.
The 1N5822U is suitable for switching mode
power supplies and high frequency DC to DC
converters such as low voltage high frequency
inverter, free wheeling or polarity protection.
■
Table 1.
Order code
1N5822UB1
Device summary
(1)
ESCC detailed
specification
-
5106/020/02
Quality level
Engineering
model
Flight part
Lead finish
Gold plated
Solder dip
EPPL
-
3A
Y
40 V
150 °C
0.47 V
I
F(AV)
V
RRM
T
j(max)
V
F (max)
1N5822U02B
1. Contact ST sales office for information about the specific conditions for products in die form and gold plated versions.
September 2011
Doc ID 16007 Rev 2
1/7
www.st.com
7
Characteristics
1N5822U
1
Characteristics
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
T
sol
1.
dPtot
---------------
dTj
Absolute ratings (limiting values)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward rectified current
Forward surge current
Storage temperature range
Maximum operating junction temperature
(1)
Maximum soldering temperature
(2)
T
c
= 135 °C,
δ
= 0.5
t
p
= 10 ms sinusoidal
Value
40
10
3
80
-65 to + 150
150
245
Unit
V
A
A
A
°C
°C
°C
1
<
--------------------------
condition to avoid thermal runaway for a diode on its own heatsink
Rth
(
j
–
a
)
2. Maximum duration 5 s. The same package must not be resoldered until 3 minutes have elapsed.
Table 3.
Symbol
R
th (j-c)
Thermal resistance
Parameter
Junction to case
Value
7
Unit
°C/W
Table 4.
Symbol
I
R (1)
Static electrical characteristics
Parameter
Tests conditions
T
j
= -55 °C
Reverse current
T
j
= 25 °C
T
j
= 100 °C
T
j
= 25
°C
T
j
= -55
°C
I
F
= 1A
I
F
= 3 A
I
F
= 9.4 A
V
R
= 40 V
Min.
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
Max.
40
80
12
0.4
0.56
0.485
0.455
0.70
V
Unit
µA
mA
V
F (2)
Forward voltage
T
j
= 25
°C
T
j
= 100
°C
T
j
= 25
°C
1. Pulse test : tp = 5 ms,
δ
< 2%
2. Pulse test : tp = 680 µs,
δ
< 2%
To evaluate the conduction losses use the following equation:
P = 0.32 x I
F(AV)
+ 0.050 I
F2(RMS )
Table 5.
Symbol
Dynamic characteristics
Parameter
Diode capacitance
Test conditions
V
R
= 5 V, F = 1 MHz
Min.
-
Typ.
-
Max.
240
Unit
pF
C
j
2/7
Doc ID 16007 Rev 2
1N5822U
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
3.5
δ=0.05
δ=0.1
d=0.2
δ=0.5
δ=1
Average forward current versus
ambient temperature (δ = 0.5)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
PF(av)(W)
IF(av)(A)
R
th(j-a)
=R
th(j-c)
3.0
2.5
2.0
1.5
1.0
T
R
th(j-a)
=120 °C/W
T
IF(av) (A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
δ
=tp/T
3.5
tp
δ
=tp/T
0.0
0
25
tp
Tamb(°C)
50
75
100
125
150
4.0
Figure 3.
Non repetitive surge peak forward
current versus overload duration
(maximum values)
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
50
45
40
35
30
25
20
15
IM(A)
1.0
0.9
0.8
0.7
0.6
T
c
=25 °C
Zth(j-c)/Rth(j-c)
0.5
0.4
0.3
T
c
=75 °C
T
c
=125 °C
10
5
0
1.E-03
I
M
t
0.2
0.1
0.0
Single pulse
δ
=0.5
t(s)
1.E-02
1.E-01
1.E+00
tp(s)
1.E-03
1.E-02
1.E-01
1.E+00
1.E-04
Figure 5.
Reverse leakage current versus
reverse voltage applied (typical
values)
T
j
=150°C
Figure 6.
Forward voltage drop versus
forward current (typical values)
1.E+02
IR(mA)
T
j
=125°C
10.00
IFM(A)
1.E+01
T
j
=100°C
1.00
T
j
=125°C
1.E+00
T
j
=75°C
T
j
=25°C
T
j
=100°C
1.E-01
T
j
=50°C
0.10
T
j
=25°C
1.E-02
VR(V)
1.E-03
0
5
10
15
20
25
30
35
40
0.01
0.0
0.1
0.2
0.3
0.4
0.5
VFM(V)
0.6
0.7
Doc ID 16007 Rev 2
3/7
Characteristics
Figure 7.
1N5822U
Non repetitive surge peak forward current versus number of cycles
100
IFSM(A)
F=50 Hz
T
j initial
=25°C
80
60
40
20
Number of cycles
0
1
10
100
1000
4/7
Doc ID 16007 Rev 2
1N5822U
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Table 6.
Leadless chip carrier 2 (LCC2B) package dimensions
Dimensions
Ref.
Millimeters
Min.
A
B
D
Note 1
Inches
Min.
0.080
0.207
0.137
0.067
0.019
-
-
-
-
-
-
Typ.
Max.
Typ. Max.
2.23
5.4
3.62
1.90
-
1.4
3.32
1.82
0.15
0.15
0.20
2.42
5.6
3.82
2.09
0.71
-
-
-
-
-
-
A
(1)
B
2.04
5.27
3.49
1.71
0.48
-
-
-
-
-
-
0.088 0.095
0.213 0.220
0.143 0.150
0.075 0.082
-
0.055
0.131
0.072
0.006
0.006
0.008
0.028
-
-
-
-
-
-
2
C
1
C
Note 1
F
D
E
Pin 2 Cathode
E
Note 1
E
Pin 1 Anode
F
r1
G
H
1
2
G
H
I
r2
I
r1
r2
Note 1: The anode is identified by metallization in two top internal angles and the index mark.
1. Measurement prior to solder coating the mounting pads on bottom of package
Doc ID 16007 Rev 2
5/7
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