VS-1N5820, VS-1N5820-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3.0 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode
Anode
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
C-16
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
DO-201AD (C-16)
3A
20 V
See Electrical table
20 mA at 100 °C
150 °C
Single die
See Electrical table
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-1N5820... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3 Apk, T
J
= 25 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
3.0
20
450
0.475
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-1N5820
20
VS-1N5820-M3
20
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current at T
J
= 25 °C
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
L
= 114 °C, rectangular waveform
With cooling fins
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
3.0
450
90
A
UNITS
Revision: 11-Oct-11
Document Number: 93257
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-1N5820, VS-1N5820-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
SYMBOL
V
FM (1)
I
RM (1)
C
T
L
S
dV/dt
3A
9.4 A
T
J
= 25 °C
T
J
= 100 °C
TEST CONDITIONS
T
J
= 25 °C
V
R
= Rated V
R
TYP.
0.41
0.49
0.05
8.1
350
9.0
-
MAX.
0.475
0.85
2.0
20
-
-
10 000
UNITS
V
Maximum reverse leakage current
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
mA
pF
nH
V/µs
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J
(1)
,
TEST CONDITIONS
VALUES
- 65 to 150
UNITS
°C
T
Stg
With fin 20 x 20 (0.79 x 0.79) 1.0 thick
DC operation
Without cooling fin
R
thJL
R
thJA
34
°C/W
80
1.2
0.042
g
oz.
1N5820
Case style C-16
dP
tot
1
------------ < ------------- thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Revision: 11-Oct-11
Document Number: 93257
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-1N5820, VS-1N5820-M3
www.vishay.com
Vishay Semiconductors
Allowable Lead Temperature (°C)
150
140
130
DC
120
110
100
see
note (1)
90
0
93257_04
I
F
- Instantaneous Forward Current (A)
100
10
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1
Square
wave
(D = 0.5)
0.5
1
1.5
2
2.5
3
3.5
4
4.5
93257_01
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Typical Average Forward Current vs.
Allowable Lead Temperature
100
T
J
= 150 °C
1.4
1.2
1
0.8
RMS Limit
0.6
0.4
0.2
0
0
5
10
15
20
93257_05
I
R
- Reverse Current (mA)
10
T
J
= 125 °C
T
J
= 100 °C
1
T
J
= 75 °C
0.1
T
J
= 50 °C
T
J
= 25 °C
Average Power Loss (W)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
0.01
0.001
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
93257_02
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
1000
I
FSM
- Non-Repetitive Surge Current (A)
1000
T
J
= 25 °C
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
At Any Rated Load Condition
And With rated V
RRM
Applied
Following
Surge
100
0
93257_03
10
10
100
1000
10 000
5
10
15
20
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
93257_06
t
p
- Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D)
Revision: 11-Oct-11
Document Number: 93257
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-1N5820, VS-1N5820-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
-
-
-
1N5820
2
TR
3
-M3
4
Vishay Semiconductors product
Part number: 3 A, 20 V
TR = Tape and reel package
None = Bulk package
-
Environmental digit
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-1N5820
VS-1N5820TR
VS-1N5820-M3
VS-1N5820TR-M3
QUANTITY PER T/R
500
1200
500
1200
MINIMUM ORDER QUANTITY
500
1200
500
1200
PACKAGING DESCRIPTION
Bulk
Tape and reel
Bulk
Tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95242
www.vishay.com/doc?95304
www.vishay.com/doc?95338
Revision: 11-Oct-11
Document Number: 93257
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Axial DO-204AL (DO-41)
DIMENSIONS
in millimeters (inches)
2.70 (0.106)
DIA.
2.29 (0.090)
Cathode band
27.0 (1.06) MIN.
(2 places)
27.0 (1.06) MIN.
(2 places)
5.21 (0.205)
MAX.
5.21 (0.205)
MAX.
1.27 (0.050) MAX.
Flash (2 places)
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
2.70 (0.106)
DIA.
2.29 (0.090)
Revision: 29-Aug-11
Document Number: 95241
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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