星合电子
ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ
1N5817SF THRU 1N5819SF
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage 20 to 40 Volts
Forward Current - 1.0Ampere
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Metal silicon junction ,majority carrier conduction
Guard ring for overvoltage protection
Low power loss ,high efficiency
High current capability ,Low forward voltage drop
High surge capability
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
High temperature soldering guaranteed:260 C/10 seconds at terminals,
0.375"(9.5mm)lead length,5lbs.(2.3kg)tension
0.040(1.00 )
0.020(0.50)
SOD-123FL
0.077(1.95 )
0.054(1.38)
0.114(2.90 )
0.098(2.50)
0.154(3.90)
0.138(3.50)
5
°
0.010(0.25)
MAX
0.052(1.33)
0.031(0.8)
0.010(0.25)
MIN
MECHANICAL DATA
Case
: SOD-123FL molded plastic body
Lead Finish: 100% Matte Sn (Tin)
Polarity
: color band denotes cathode end
Mounting Position:
Any
Weight
: 11.7 mg(approximately)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method) at
T
L=70 C
Maximum instantaneous forward voltage at 1.0 A(note 1 )
Maximum instantaneous forward voltage at 3.1 A(note 1 )
Maximum instantaneous reverse
T
A
=25 C
current at rated DC blocking
T
A
=100 C
voltage(Note 1)
Typical junction capacitance(Note 3)
Typical thermal resistance(Note 2)
Operating junction and storage temperature range
1N5817SF
20
14
20
24
1N5818SF
30
21
30
36
1.0
25.0
0.450
0.750
0.550
0.875
0.2
10.0
110.0
82.0
26.0
-65 to +150
0.600
0.900
1N5819SF
40
28
40
48
Units
V
RRM
V
RMS
V
DC
V
RSM
I
(AV)
I
FSM
V
F
V
F
I
R
C
J
R
JA
R
JL
T
J
T
STG
V
olts
V
olts
V
olts
V
olts
A
mp
A
mps
V
olts
V
olts
m
A
P
F
C/W
C
Notes:
1.Pulse test: 300
s pulse width,1% duty cycle
2.Thermal resistance (from junction to ambient)Vertical P
.C.B. mounted with 1 in. copper pad (Cu area 700 mm2).
3.Measured at 1.0MHz and reverse voltage of 4.0 volts
1
ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７
星合电子
ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ
1N5817SF THRU 1N5819SF
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage 20 to 40 Volts
Forward Current - 1.0Ampere
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
1
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
0.75
25
PEAK FORWARD SURGE
CURRENT(AMPERES)
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0.5
0.25
0
0
20
40
60
80
100
120
140
RESISTIVE OR INDUCTIVE LOAD
0.375" (9.5MM) LEAD LENGTH
20
15
10
5
LEAD TEMPERATURE ( C)
0
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
FIG.4-TYPICAL REVERSE CHARACTERISTICS
100
10
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
INSTANTANEOUS FORWARD CURRENT( AMPERES)
10
T
J
=125 C
PULSE WIDTH=300
1% DUTY CYCLE
S
1
T
J
=25 C
1.0
T
J
=125 C
0.1
0.1
T
J
=75 C
0.01
T
J
=25 C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
0
20
40
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE %
FIG.5-TYPICAL JUNCTION CAPACITANCE
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE, C/ W
100
JUNCTION CAPACITANCE(pF)
400
T
J
=25 C
f=1.0MH
Z
Vsig=50mVp-p
10
100
1
10
0.1
1
10
100
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE. VOLTS
T, PULSE DURATION ,sec.
2
ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７
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