1N5817
Vishay High Power Products
Schottky Rectifier, 1.0 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
Cathode
Anode
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
DO-204AL
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
1.0 A
20 V
10 mA at 100 °C
DESCRIPTION
The 1N5817 axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
1 Apk, T
J
= 25 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
1.0
20
240
0.45
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
1N5817
20
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current at T
J
= 25 °C
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
TEST CONDITIONS
50 % duty cycle at T
L
= 138 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
1.0
240
40
A
UNITS
Document Number: 93255
Revision: 06-Nov-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
1N5817
Vishay High Power Products
Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
SYMBOL
V
FM (1)
I
RM (1)
C
T
L
S
dV/dt
1A
3A
T
J
= 25 °C
T
J
= 100 °C
TEST CONDITIONS
T
J
= 25 °C
TYP.
0.42
0.50
0.012
2.0
110
8.0
-
MAX.
0.45
0.75
1.0
10
-
-
10 000
UNITS
V
Maximum reverse leakage current
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
V
R
= Rated V
R
mA
pF
nH
V/µs
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJL
R
thJA
TEST CONDITIONS
VALUES
- 65 to 150
UNITS
°C
DC operation
Lead length = 1/8"
DC operation
Without cooling fin
32
°C/W
100
0.33
0.012
g
oz.
1N5817
Case style DO-204AL (DO-41)
dP
tot
1
------------ < ------------- thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93255
Revision: 06-Nov-08
1N5817
Schottky Rectifier, 1.0 A
Vishay High Power Products
100
Junction Capacitance - C
T
(pF)
1000
Tj = 25˚C
100
Instantaneous Forward Current - I
F
(A)
10
10
0
5
10
15
20
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
150
1
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
Allowable Lead Temperature (°C)
145
140
Square wave
(D = 0.5)
DC
135
see note (1)
0.1
0
0.2
0.4
0.6
0.8
Forward Voltage Drop - V
FM
(V)
1
130
0
0.4
0.8
1.2
1.6
Average Forward Current - I
F(AV)
(A)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
0.5
Allowable Power Loss (Watts)
100
Reverse Current - I
R
(mA)
10
Tj = 150˚C
1
0.1
50˚C
125˚C
100˚C
75˚C
0.4
0.3
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS Limit
0.2
0.1
0
DC
0.01
0.001
0.0001
0
25˚C
5
10
15
Reverse Voltage - V
R
(V)
20
0
0.4
0.8
1.2
1.6
Average Forward Current - I
F(AV)
(A)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D)
Document Number: 93255
Revision: 06-Nov-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
1N5817
Vishay High Power Products
Schottky Rectifier, 1.0 A
1000
Non-Repetitive Surge Current - I
FSM
(A)
100
Tj = 25˚C
10
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
ORDERING INFORMATION TABLE
Device code
1N5817
1
1
2
-
-
TR
2
Part number: 1 A, 20 V
TR = Tape and reel package (5000 pcs)
None = Box package (1000 pcs)
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
http://www.vishay.com/doc?95241
http://www.vishay.com/doc?95304
http://www.vishay.com/doc?95308
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93255
Revision: 06-Nov-08
Outline Dimensions
Vishay Semiconductors
Axial DO-204AL (DO-41)
DIMENSIONS
in millimeters (inches)
2.70 (0.106)
DIA.
2.29 (0.090)
Cathode band
27.0 (1.06) MIN.
(2 places)
27.0 (1.06) MIN.
(2 places)
5.21 (0.205)
MAX.
5.21 (0.205)
MAX.
1.27 (0.050) MAX.
Flash (2 places)
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
2.70 (0.106)
DIA.
2.29 (0.090)
Document Number: 95241
Revision: 22-Nov-07
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
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