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1N5407: 产品描述3 A, SILICON, RECTIFIER DIODE, DO-201AD; 产品类别半导体分立半导体; 文件大小36KB，共1页; 制造商重庆平伟实业

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1N5407概述

3 A, SILICON, RECTIFIER DIODE, DO-201AD

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.

1N5400 THRU 1N5408

TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER

VOLTAGE：50-1000V

CURRENT：3.0A

FEATURES

·High

reliability

·Low

leakage

·Low

forward voltage drop

·High

current capability

DO-27

1.0(25.4)

MIN.

.375(9.5)

.335(8.5)

.052(1.3)

.048(1.2)

DIA.

MECHANICAL DATA

·Case:

Molded plastic

·Epoxy:

UL94V-0 rate flame retardant

·Lead:

MIL-STD- 202E, Method 208 guaranteed

·Polarity:Color

band denotes cathode end

·Mounting

position:

Any

·Weight:

1.18 grams

.220(5.6)

.187(5.0)

1.0(25.4)

MIN.

DIA.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward rectified Current

.375”(9.5mm) lead length at T

=75°C

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

Maximum Instantaneous forward Voltage at 3.0A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@ T

=25°C

RRM

RMS

FSM

100

200

140

200

400

280

400

3.0

150

1.1

5.0

500

°C/W

600

420

600

800

560

800

1000

700

1000

@ T

=100°C

Maximum Full Load Reverse Current Average,

Full Cycle .375”(9.5mm) lead length at T

=75°C

Typical Junction Capacitance (Note)

θJA

Typical Thermal Resistance

Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts

µA

１

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1N5407相似产品对比

	1N5407	1N5400	1N5401	1N5402	1N5404	1N5406	1N5408
描述	3 A, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 600 V, SILICON, RECTIFIER DIODE	RECTIFIER DIODE,1KV V(RRM),DO-204AE
端子数量	-	2	2	2	2	2	-
元件数量	-	1	1	1	1	1	-
加工封装描述	-	塑料 PACKAGE-2	塑料 PACKAGE-2	塑料 PACKAGE-2	绿色, 塑料 PACKAGE-2	铅 FREE, 塑料, CASE 267-05, 2 PIN	-
状态	-	ACTIVE	ACTIVE	DISCONTINUED	ACTIVE	DISCONTINUED	CONSULT MFR
包装形状	-	圆	圆	圆	圆	圆	-
包装尺寸	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	-
端子形式	-	线	线	线	线	线	-
端子涂层	-	MATTE 锡	锡	锡铅	PURE 锡	MATTE 锡	-
端子位置	-	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	-
包装材料	-	塑料/环氧树脂	塑料/环氧树脂	塑料/环氧树脂	塑料/环氧树脂	塑料/环氧树脂	-
结构	-	单一的	单一的	单一的	单一的	单一的	-
壳体连接	-	隔离	隔离	隔离	隔离	隔离	-
二极管元件材料	-	硅	硅	硅	硅	硅	-
二极管类型	-	整流二极管	整流二极管	整流二极管	整流二极管	整流二极管	整流二极管
应用	-	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	EFFICIENCY	GENERAL PURPOSE	-
相数	-	1	1	1	1	1	-
最大重复峰值反向电压	-	50 V	100 V	200 V	400 V	600 V	-
最大平均正向电流	-	3 A	3 A	3 A	3 A	3 A	-
最大非重复峰值正向电流	-	200 A	200 A	200 A	200 A	200 A	-

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