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1N5407

产品描述3 A, SILICON, RECTIFIER DIODE, DO-201AD
产品类别半导体    分立半导体   
文件大小174KB,共2页
制造商DAESAN
官网地址http://www.diodelink.com
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1N5407概述

3 A, SILICON, RECTIFIER DIODE, DO-201AD

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1N5400 THRU 1N5408
Features
· The plastic package carries Underwrites Laboratory
Flammability Classification 94V-0
· Construction utilizes void-free molded plastic technique
· High surge current capability
· 3.0A operation at T
L
=70℃ with no thermal runaway
· Typical I
R
less than 0.1μA
· High temperature soldering guaranteed : 250℃/10 seconds,
0.375"(9.5mm) lead length, 5lbs.(2.3kg) tension
CURRENT 3.0 Amperes
VOLTAGE 50 to 1000 Volts
DO-201AD
0.210(5.3)
0.188(4.8)
DIA.
1.0(25.4)
MIN.
Mechanical Data
· Case : JEDEC DO-201AD molded plastic body
· Terminals : Lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.042 ounce, 0.19 gram
0.375(9.5)
0.285(7.2)
0.042(1.1)
0.037(0.9)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage to T
A
=105℃
Maximum average forward rectified current
0.375"(9.5mm) lead length T
L
=105℃
Peak forward surge current 8.3ms half sine
wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 3.0A
Maximum reverse current
at rated DC blocking voltage
T
A
=25℃
T
A
=100℃
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
JA
C
J
T
A
T
J
T
STG
1N
5400
50
35
50
1N
5401
100
70
100
1N
5402
200
140
200
1N
5404
400
280
400
3.0
200.0
1.1
10.0
300.0
20.0
35.0
+150.0
-50 to +175
1N
5406
600
420
600
1N
5407
800
560
800
1N
5408
1000
700
1000
Units
Volts
Volts
Volts
Amps
Amps
Volts
μA
℃/W
pF
Typical thermal resistance (Note 2)
Typical junction capacitance (Note 1)
Maximum DC Blocking Voltage Temperature
Operating and Storage temperature Range
Notes:
(1) Measured at 1MHz and applied reverse voltage of 4.0V DC.
(2) Thermal resistance from junction to ambient and from junction to lead at 0.375"(9.5mm) lead length, P.C.B. mounted

1N5407相似产品对比

1N5407 1N5408 1N5400
描述 3 A, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE,1KV V(RRM),DO-204AE current 3.0 amperes voltage 50 to 1000 volts

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