1N5059...1N5062
Vishay Telefunken
Silicon Mesa Rectifiers
Features
D
D
D
D
D
Controlled avalanche characteristics
Glass passivated
Low reverse current
High surge current loading
Hermetically sealed axial–leaded glass
envelope
Applications
Rectifier, general purpose
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Test Conditions
Type
1N5059
1N5060
1N5061
1N5062
Symbol
V
R
=V
RRM
Value
200
400
600
800
50
2
0.8
–55...+175
20
Unit
V
V
V
V
A
A
A
°
C
mJ
Peak forward surge current
Average forward current
g
Junction and storage
temperature range
Max. pulse energy in avalanche
mode, non repetitive
(inductive load switch off)
t
p
=10ms, half–sinewave
R
thJA
=45K/W, T
amb
=50
°
C
R
thJA
=100K/W, T
amb
=75
°
C
I
FSM
I
FAV
I
FAV
T
j
=T
stg
E
R
I
(BR)R
=1A, indicutive load
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
lead length l = 10mm, T
L
= constant
on PC board with spacing 25 mm
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Document Number 86000
Rev. 2, 24-Jun-98
www.vishay.de
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1N5059...1N5062
Vishay Telefunken
3.0
I
FAV
– Average Forward Current ( A )
C
D
– Diode Capacitance ( pF )
2.5
2.0
1.5
1.0
0.5
0
0
15763
50
V
R
= V
R RM
half sinewave
R
thJA
=45K/W
l=10mm
f=1MHz
40
30
20
10
0
0.1
15766
R
thJA
=100K/W
PCB: d=25mm
20
40
60
80 100 120 140 160 180
1.0
10.0
100.0
T
amb
– Ambient Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
100
10
1
0.1
0.01
T
j
= 175°C
T
j
= 25°C
Figure 5. Typ. Diode Capacitance vs. Reverse Voltage
I
F
– Forward Current ( A )
0.001
0
15762
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
V
F
– Forward Voltage ( V )
Figure 4. Max. Forward Current vs. Forward Voltage
Dimensions in mm
∅
3.6 max.
Sintered Glass Case
SOD 57
Weight max. 0.5 g
Cathode Identification
technical drawings
according to DIN
specifications
94 9538
∅
0.82 max.
26 min.
4.2 max.
26 min.
Polarity: Cathode indicated by a band
Document Number 86000
Rev. 2, 24-Jun-98
www.vishay.de
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3 (4)
1N5059...1N5062
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de
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4 (4)
Document Number 86000
Rev. 2, 24-Jun-98
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