NTHD3133PF
Power MOSFET and
Schottky Diode
-20 V, FETKYt, P-Channel, -4.4 A, with
3.7 A Schottky Barrier Diode, ChipFETt
Features
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MOSFET
V
(BR)DSS
-20 V
R
DS(on)
TYP
64 mW @ -4.5 V
85 mW @ -2.5 V
-4.4 A
I
D
MAX
•
•
•
•
•
•
•
•
•
•
•
Leadless SMD Package Featuring a MOSFET and Schottky Diode
40% Smaller than TSOP-6 Package
Leadless SMD Package Provides Great Thermal Characteristics
Independent Pinout to each Device to Ease Circuit Design
Trench P-Channel for Low On Resistance
Ultra Low V
F
Schottky
These are Pb-Free Devices
Li-Ion Battery Charging
High Side DC-DC Conversion Circuits
High Side Drive for Small Brushless DC Motors
Power Management in Portable, Battery Powered Products
Parameter
Symbol
V
DSS
V
GS
Steady
State
t
≤
5s
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
P
D
T
J
= 25°C
2.1
I
DM
T
J
, T
STG
I
S
T
L
-13
-55 to
150
2.5
260
A
°C
A
°C
I
D
Value
-20
±8.0
-3.2
-2.3
-4.4
1.1
W
Units
V
V
A
SCHOTTKY DIODE
V
R
MAX
20 V
S
V
F
TYP
0.35 V
A
I
F
MAX
3.7 A
Applications
G
MOSFET MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
D
P-Channel MOSFET
C
Schottky Diode
8
ChipFET
CASE 1206A
STYLE 3
1
Power Dissipation
(Note 1)
Steady
State
t
≤
5s
Pulsed Drain Current
t
p
= 10
ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
PIN
CONNECTIONS
1
8
MARKING
DIAGRAM
1
DA M
G
2
3
4
8
7
6
5
A
2
7
C
C
6
A
S
3
SCHOTTKY DIODE MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified
Forward Current
Steady
State
t
≤
5s
T
J
= 25°C
3.7
A
Symbol
V
RRM
V
R
I
F
Value
20
20
2.2
Units
V
V
V
D
D
4
5
G
DA = Specific Device Code
M = Month Code
G
= Pb-Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2007
1
October, 2007 - Rev. 0
Publication Order Number:
NTHD3133PF/D
NTHD3133PF
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 2)
Junction-to-Ambient – t
≤
10 s (Note 2)
Symbol
R
qJA
R
qJA
Max
113
60
Units
°C/W
°C/W
2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
DS
= -16 V,
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= -250
mA
-20
-15
-1.0
-5.0
±100
nA
V
mV/°C
mA
Symbol
Test Conditions
Min
Typ
Max
Units
Gate-to-Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain-to-Source On-Resistance
V
DS
= 0 V, V
GS
=
±8.0
V
V
GS
= V
DS
, I
D
= -250
mA
V
GS
= -4.5, I
D
= -3.2 A
V
GS
= -2.5, I
D
= -2.2 A
V
GS
= -1.8, I
D
= -1.0 A
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
-0.45
2.7
64
85
120
8.0
-1.5
80
110
170
V
mV/°C
mW
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
g
FS
V
DS
= -10 V, I
D
= -2.9 A
S
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= -4.5 V, V
DS
= -10 V,
I
D
= -3.2 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= -10 V
680
100
70
7.4
0.6
1.4
2.5
pF
nC
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= -4.5 V, V
DD
= -10 V,
I
D
= -3.2 A, R
G
= 2.4
W
5.8
11.7
16
12.4
ns
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, I
S
= -2.5 A
T
J
= 25°C
-0.8
13.5
9.5
4.0
6.5
-1.2
V
ns
V
GS
= 0 V, I
S
= -1.0 A ,
dI
S
/dt = 100 A/ms
nC
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
Maximum Instantaneous
Forward Voltage
Maximum Instantaneous
Reverse Current
Non-Repetitive Peak Surge Current
Symbol
V
F
I
R
I
FSM
Test Conditions
I
F
= 0.1 A
I
F
= 1.0 A
V
R
= 10 V
V
R
= 20 V
Halfwave, Single Pulse 60 Hz
Min
Typ
Max
0.31
0.365
0.75
2.5
23
A
mA
Units
V
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTHD3133PF
TYPICAL P-CHANNEL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
9
-I
D,
DRAIN CURRENT (AMPS)
8
7
6
-2.2 V
5
4
3
2
1
0
0
1
2
3
4
5
6
-1.8 V
-1.6 V
-1.4 V
7
8
9
10
-2 V
V
GS
= -5 V to -3.6 V
V
GS
= -3 V
-2.6 V
9
-I
D,
DRAIN CURRENT (AMPS)
8
7
6
5
4
3
2
1
0
0
T
C
= -55°C
25°C
100°C
3.5
V
DS
≥
-10 V
T
J
= 25°C
-2.4 V
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1
3
0.5
1.5
2
2.5
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
R
DS(on),
DRAIN-TO-SOURCE RESISTANCE (W)
R
DS(on),
DRAIN-TO-SOURCE RESISTANCE (W)
0.2
0.2
Figure 2. Transfer Characteristics
0.175
0.15
I
D
= -3.2 A
T
J
= 25°C
T
J
= 25°C
0.175
0.15
V
GS
= -2.5 V
0.125
0.1
0.125
0.1
V
GS
= -4.5 V
0.075
0.05
1
3
5
2
4
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
6
0.075
0.05
2
3
4
5
6
7
8
-I
D,
DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
1.4
R
DS(on),
DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
10
-25
0
25
50
75
100
125
150
I
D
= -3.2 A
V
GS
= -4.5 V
-I
DSS
, LEAKAGE (A)
1000
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 100°C
100
2
4
6
8
10
12
14
16
18
20
-T
J
, JUNCTION TEMPERATURE (°C)
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
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3
NTHD3133PF
TYPICAL P-CHANNEL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
V
GS
= 0 V
C, CAPACITANCE (pF)
1200
C
ISS
T
J
= 25°C
-V
GS,
GATE-TO-SOURCE VOLTAGE (V)
1500
5
Q
T
4 -V
DS
3
Q
GS
Q
GD
8
-V
GS
6
10
-V
DS,
DRAIN-TO-SOURCE VOLTAGE (V)
900
V
DS
= 0 V
600
C
RSS
2
4
300
C
OSS
0
5
-V
GS
0
-V
DS
5
10
15
20
1
I
D
= -3.2 A
T
J
= 25°C
0
2
4
6
8
2
0
0
Q
g
, TOTAL GATE CHARGE (nC)
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
-I
S
, SOURCE CURRENT (AMPS)
V
DS
= -10 V
I
D
= -3.2 A
V
GS
= -4.5 V
100
t, TIME (ns)
t
d(off)
t
f
t
r
10
t
d(on)
5
Figure 8. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
4
3
2
1
0
0.3
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0.6
0.9
1.2
-V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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NTHD3133PF
TYPICAL SCHOTTKY PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
10
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
1
T
J
= 150°C
1
T
J
= 150°C
T
J
= 25°C
T
J
= -55°C
0.20
0.40
0.60
0.80
T
J
= 25°C
0.20
0.40
0.60
0.80
0.1
0.00
0.1
0.00
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 11. Typical Forward Voltage
100E-3
I
R,
REVERSE CURRENT (AMPS)
T
J
= 150°C
10E-3
I
R,
MAXIMUM REVERSE CURRENT (AMPS)
100E-3
Figure 12. Maximum Forward Voltage
T
J
= 150°C
10E-3
T
J
= 100°C
T
J
= 100°C
1E-3
1E-3
100E-6
T
J
= 25°C
10E-6
0
10
V
R
, REVERSE VOLTAGE (VOLTS)
100E-6
T
J
= 25°C
10E-6
0
10
V
R
, REVERSE VOLTAGE (VOLTS)
20
20
Figure 13. Typical Reverse Current
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
Figure 14. Maximum Reverse Current
I
O,
AVERAGE FORWARD CURRENT (AMPS)
3.5
freq = 20 kHz
3
2.5
2
1.5
1
0.5
0
25
dc
square wave
Ipk/Io =
p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
0.5
1
1.5
2
2.5
3
3.5
I
O
, AVERAGE FORWARD CURRENT (AMPS)
Ipk/Io =
p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
square wave
dc
45
65
85
105
125
145
165
T
L
, LEAD TEMPERATURE (°C)
Figure 15. Current Derating
Figure 16. Forward Power Dissipation
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