J/SST111 Series
Vishay Siliconix
N-Channel JFETs
J111
J112
J113
PRODUCT SUMMARY
Part Number
J/SST111
J/SST112
J/SST113
SST111
SST112
SST113
V
GS(off)
(V)
–3 to –10
–1 to –5
v–3
r
DS(on)
Max (W)
30
50
100
I
D(off)
Typ (pA)
5
5
5
t
ON
Typ (ns)
4
4
4
FEATURES
D
D
D
D
D
Low On-Resistance: 111 < 30
W
Fast Switching—t
ON
: 4 ns
Low Leakage: 5 pA
Low Capacitance: 3 pF
Low Insertion Loss
BENEFITS
D
D
D
D
D
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response, Low Glitches
Eliminates Additional Buffering
APPLICATIONS
D
D
D
D
D
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
DESCRIPTION
The J/SST111 series consists of all-purpose analog switches
designed to support a wide range of applications. The
J/SST113 are useful in a high-gain amplifier mode.
The J series, TO-226AA (TO-92) plastic package, provides
low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
TO-226AA (TO-92)
D
1
D
1
3
S
2
S
2
G
For similar products in TO-206AA(TO-18) packaging, see the
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and
2N5564/5565/5566 (duals) data sheets.
TO-236 (SOT-23)
G
3
Top View
Top View
J111
J112
J113
SST111 (C1)*
SST112 (C2)*
SST113 (C3)*
*Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (
1
/
16
” from case for 10 seconds) . . . . . . . . . . . . . . 300
_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
For applications information see AN105.
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
www.vishay.com
Power Dissipation
a
(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW
Notes
a. Derate 2.8 mW/_C above 25_C
7-1
J/SST111 Series
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST111
J/SST112
J/SST113
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
I
D(off)
r
DS(on)
V
GS(F)
I
G
= –1
mA
, V
DS
= 0 V
V
DS
=
5
V, I
D
= 1
mA
V
DS
= 15 V, V
GS
= 0 V
V
GS
= –15 V, V
DS
= 0 V
T
A
= 125_C
V
DG
= 15 V, I
D
= 10 mA
V
DS
= 5 V, V
GS
= –10 V
T
A
= 125_C
V
GS
= 0 V, V
DS
= 0.1 V
I
G
= 1 mA , V
DS
= 0 V
–55
–35
–3
20
–10
–35
–1
5
–1
–1
–5
–35
V
–3
2
–1
nA
pA
mA
–0.005
–3
–5
0.005
3
1
1
1
nA
30
0.7
50
100
W
V
Dynamic
Common-Source Forward
Transconductance
Common-Source
Output Conductance
Drain-Source On-Resistance
Common-Source
Input Capacitance
Common-Source Reverse Transfer
Capacitance
Equivalent Input
Noise Voltage
g
fs
g
os
r
ds(on)
C
iss
C
rss
e
n
V
DS
= 20 V, I
D
= 1 mA
f = 1 kHz
6
25
30
7
3
3
12
5
50
12
5
100
12
pF
5
nV⁄
√Hz
mS
mS
W
V
GS
= 0 V, I
D
= 0 mA
f = 1 kHz
V
DS
= 0 V, V
GS
=
-10
V
f = 1 MHz
V
DG
= 10 V, I
D
= 1 mA
f = 1 kHz
Switching
t
d(on)
Turn-On Time
t
r
t
d(off)
t
f
V
DD
= 10 V, V
GS(H)
= 0 V
See Switching Circuit
2
2
ns
6
15
Turn-Off Time
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v3%.
NCB
www.vishay.com
7-2
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
100
r
DS(on)
– Drain-Source On-Resistance (
Ω )
200
r
DS(on)
– Drain-Source On-Resistance (
Ω )
100
I
DSS
– Saturation Drain Current (mA)
On-Resistance vs. Drain Current
T
A
= 25° C
r
DS
@
I
D
=
1 mA
,
V
GS
= 0
I
DSS
@
V
DS
=
20 V, V
GS
= 0
80
I
DSS
120
160
80
V
GS(off)
= –2 V
60
60
r
DS
40
80
40
–4 V
–8 V
20
40
20
0
0
–2
–4
–6
–8
–10
0
0
1
10
I
D
– Drain Current (mA)
100
V
GS(off)
– Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
200
r
DS(on)
– Drain-Source On-Resistance (
Ω )
I
D
= 1 mA
r
DS
changes X 0.7%/_C
160
4
Switching Time (ns)
5
Turn-On Switching
t
r
approximately independent of I
D
V
DD
= 5 V, R
G
= 50
Ω
V
GS(L)
= –10 V
t
r
120
V
GS(off)
= –2 V
3
t
d(on)
@
I
D
= 12 mA
2
80
–4 V
–8 V
40
1
t
d(on)
@
I
D
= 3 mA
0
–55 –35
–15
5
25
45
65
85
105
125
T
A
– Temperature ( _C)
0
0
–2
–4
–6
–8
–10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
Turn-Off Switching
30
t
d(off)
independent of device V
GS(off
)
V
DD
= 5 V, V
GS(L)
= –10 V
24
Switching Time (ns)
Capacitance (pF)
24
30
Capacitance vs. Gate-Source Voltage
f = 1 MHz
18
t
f
@
V
GS(off)
= –2 V
18
12
t
d(off)
6
t
f
@
V
GS(off)
= –8 V
0
0
2
4
6
8
10
I
D
– Drain Current (mA)
12
C
iss
@ V
DS
= 0 V
6
C
rss
@ V
DS
= 0 V
0
0
–4
–8
–12
–16
–20
V
GS
– Gate-Source Voltage (V)
www.vishay.com
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
7-3
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Noise Voltage vs. Frequency
100
V
DS
= 10 V
g
fs
– Forward Transconductance (mS)
Hz
40
g
fs
30
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
50
g
fs
and g
os
@ V
DS
= 20 V
V
GS
= 0 V, f = 1 kHz
500
g os – Output Conductance (mS)
en – Noise Voltage nV /
g
os
250
10
I
D
= 1 mA
20
I
D
= 10 mA
10
1
10
100
1k
f – Frequency (Hz)
10 k
100 k
0
0
–2
–4
–6
–8
–10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
Gate Leakage Current
10 nA
I
D
= 10 mA
I
GSS
@ 125_C
T
A
= 125_C
100
Common-Gate Input Admittance
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
1 nA
g
ig
1 mA
– Gate Leakage
100 pA
(mS)
1 mA
10 pA
T
A
= 25_C
1 pA
10 mA
10
b
ig
I
GSS
@ 25_C
1
I
G
0.1 pA
0
6
12
18
24
30
0.1
100
200
500
1000
V
DG
– Drain-Gate Voltage (V)
f – Frequency (MHz)
Common-Gate Forward Admittance
100
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
–g
fg
10
(mS)
(mS)
g
fg
b
fg
1.0
10
Common-Gate Reverse Admittance
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
–b
rg
+g
rg
–g
rg
0.1
1
0.1
100
200
500
1000
f – Frequency (MHz)
www.vishay.com
0.01
100
200
500
f – Frequency (MHz)
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
1000
7-4
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Common-Gate Output Admittance
100
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
I
D
– Drain Current (mA)
b
og
10
(mS)
100
Output Characteristics
V
GS(off)
= –4 V
80
60
V
GS
= 0 V
–0.5
g
og
1
40
–1.0
–1.5
20
–2.0
–2.5
0.1
100
200
500
1000
0
0
2
4
6
8
10
f – Frequency (MHz)
V
DS
– Drain-Source Voltage (V)
Output Characteristics
40
V
GS(off)
= –4 V
32
I
D
– Drain Current (mA)
V
GS
= 0 V
24
–0.5
–1.0
16
–1.5
–2.0
8
–2.5
–3.0
0
0
0.2
0.4
0.6
0.8
1.0
0
0
–1
I
D
– Drain Current (mA)
80
100
Transfer Characteristics
V
GS(off)
= –4 V
V
DS
= 20 V
T
A
= –55_C
60
25_C
40
20
125_C
–2
–3
–4
–5
V
DS
– Drain-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
SWITCHING TIME TEST CIRCUIT
J/SST111
V
GS(L)
R
L
*
I
D(on)
*Non-inductive
–12 V
800
W
12 mA
V
DD
J/SST112
–7 V
1600
W
6 mA
J/SST113
–5 V
3200
W
3 mA
R
L
OUT
V
GS(H)
V
GS(L)
INPUT PULSE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
SAMPLING SCOPE
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
V
GS
Scope
1
kW
51
W
51
W
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-5
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