Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C, unless otherwise specified)
Symbol
V
RWM
V
BR
I
R
V
C
V
C
I
PP
C
J
DC
Parameter
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
Diode Capacitance Matching
(Note 2)
I
T
= 1 mA (Note 3)
V
RWM
= 24 V
I
PP
= 1 A (8/20
ms
Waveform)
(Note 4)
I
PP
= 3 A (8/20
ms
Waveform)
(Note 4)
8/20
ms
Waveform (Note 4)
V
R
= 0 V, f = 1 MHz (Line to GND)
V
R
= 0 V, 5 MHz (Note 5)
Test Conditions
Min
24
26.2
−
−
−
−
−
−
Typ
−
−
15
33.4
44
−
−
0.1
Max
−
32
100
36.6
50
3.0
10
2
Unit
V
V
nA
V
V
A
pF
%
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surge protection devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater
than the DC or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
4. Pulse waveform per Figure 1.
5.
DC
is the percentage difference between C
J
of lines 1 and 2 measured according to the test conditions given in the electrical characteristics
table.
ORDERING INFORMATION
Device
NUP2115LT1G
SZNUP2115LT1G
NUP2115LT3G
SZNUP2115LT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NUP2115L, SZNUP2115L
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
110
% OF PEAK PULSE CURRENT
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
t, TIME (ms)
20
25
30
t
d
= I
PP
/2
c−t
3.5
WAVEFORM
PARAMETERS
t
r
= 8
ms
t
d
= 20
ms
I
PP
, PEAK PULSE CURRENT (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
30
35
40
45
50
V
C
, CLAMPING VOLTAGE (V)
Figure 1. Pulse Waveform, 8
×
20
ms
9
8
C, CAPACITANCE (pF)
7
6
5
4
3
2
0
5
10
15
20
25
125°C
I
T
, (mA)
25°C
Figure 2. Clamping Voltage vs Peak Pulse Current
50
45
40
35
30
25
20
15
10
5
0
20
22
T
A
=
−55°C
24
26
28
30
32
34
V
BR
, VOLTAGE (V)
25°C
65°C
125°C
V
R
, REVERSE VOLTAGE (V)
Figure 3. Typical Junction Capacitance vs
Reverse Voltage
25
V
R
, REVERSE BIAS VOLTAGE (V)
20
15
10
5
0
120
−55°C
+25°C
T
A
= +150°C
PERCENT DERATING (%)
100
80
60
40
20
0
−60
Figure 4. V
BR
versus I
T
Characteristics
0
1
2
3
I
L
, LEAKAGE CURRENT (nA)
4
5
−30
0
30
60
90
TEMPERATURE (°C)
120
150 180
Figure 5. I
R
versus Temperature Characteristics
Figure 6. Temperature Power Dissipation Derating
www.onsemi.com
3
NUP2115L, SZNUP2115L
APPLICATIONS
Surge protection diodes provide a low cost solution to
conducted and radiated Electromagnetic Interference (EMI)
and Electrostatic Discharge (ESD) noise problems. The
noise immunity level and reliability of FlexRay transceivers
can be easily increased by adding external surge protection
diodes to prevent transient voltage failures.
The NUP2115L provides a surge protection solution for
FlexRay data communication lines. The NUP2115L is a
dual bidirectional surge protection device in a compact
SOT−23 package. This device is based on Zener technology
that optimizes the active area of a PN junction to provide
robust protection against transient EMI surge voltage and
ESD.
Surge Protection Diode Protection Circuit
Figure 7 provides an example of a dual bidirectional surge
protection diode array that can be used for protection with
the FlexRay network. The bidirectional array is created from
four identical Zener surge protection diodes. The clamping
voltage of the composite device is equal to the breakdown
voltage of the diode that is reversed biased, plus the diode
drop of the second diode that is forwarded biased.
Surge protection diodes provide protection to a
transceiver by clamping a surge voltage to a safe level. surge
protection diodes have high impedance below and low
impedance above their breakdown voltage. A surge
protection Zener diode has its junction optimized to absorb
the high peak energy of a transient event, while a standard
Zener diode is designed and specified to clamp a
steady state voltage.
Figure 7. FlexRay Surge Protection Circuit
www.onsemi.com
4
NUP2115L, SZNUP2115L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
3X
b
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
_
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10
_
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
0.90
3X
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
ON Semiconductor reserves the right to make changes without further notice to any products herein.
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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For additional information, please contact your local
1. Introduction
Electronic scales are gradually replacing traditional measuring tools like springs and balances in everyday life, such as electronic price computing scales and electronic weigh...[详细]
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