New Product
U(F,B)10BCT thru U(F,B)10DCT
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Rectifier
TO-220AB
ITO-220AB
FEATURES
• Oxide planar chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, IT-220AB)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB and TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
2
U10xCT
PIN 1
PIN 3
PIN 2
CASE
3
1
UF10xCT
PIN 1
PIN 3
PIN 2
2
3
1
TO-263AB
K
2
1
UB10xCT
PIN 1
PIN 2
K
HEATSINK
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
5Ax2
100 V, 150 V, 200 V
55 A
25 ns
0.89 V
150 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Max. average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Electrostatic discharge capacitor voltage,
human body model: C = 150 pF, R = 1.5 kΩ (contact mode)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min per diode
Operating junction and storage temperature range
total device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
V
C
V
AC
T
J
, T
STG
U(F,B)10BCT
100
U(F,B)10CCT
150
10
5
55
8
1500
- 55 to + 150
U(F,B)10DCT
200
UNIT
V
A
A
kV
V
°C
Document Number: 88967
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
U(F,B)10BCT thru U(F,B)10DCT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 3.0 A
I
F
= 5.0 A
I
F
= 3.0 A
I
F
= 5.0 A
Maximum reverse current per diode
(2)
rated V
R
T
J
= 25 °C
V
F
T
J
= 150 °C
T
J
= 25 °C
T
J
= 100 °C
I
R
SYMBOL
TYP.
0.97
1.05
0.79
0.89
0.5
100
13
t
rr
19.7
Q
rr
3
25
9
nC
MAX.
-
1.10
V
-
0.95
5.0
200
20
ns
µA
UNIT
Maximum instantaneous forward voltage per diode
(1)
Maximum reverse recovery time per diode
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
I
F
= 1.0 A, dI/dt = 100 A/µs,
V
R
= 30 V, I
rr
= 0.1 I
RM
I
F
= 2 A, dI/dt = 20 A/µs,
V
R
= 30 V, I
rr
= 0.1 I
RM
Maximum stored charge per diode
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤
40 ms
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
θJA
R
θJC
U10xCT
25
5.3
UF10xCT
25
7.5
UB10xCT
25
5.3
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
U10DCT-E3/4W
UF10DCT-E3/4W
UB10DCT-E3/4W
UB10DCT-E3/8W
UNIT WEIGHT
1.87
1.77
1.31
1.31
PACKAGE CODE
4W
4W
4W
8W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88967
Revision: 13-May-08
New Product
U(F,B)10BCT thru U(F,B)10DCT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
12
100
Average Forward Rectified Current (A)
Instantaneous Forward Current (A)
Resistive or Inductive Load
10
U(B)10xCT
T
J
= 150 °C
8
10
T
J
= 125 °C
6
UF10xCT
T
J
= 25 °C
1
4
2
0
0
25
50
75
100
125
150
0.1
0.1
0.5
0.9
1.3
1.7
2.1
Case Temperature (°C)
Instantaneous Forward
Voltage
(V)
Figure 1. Maximum Forward Current Derating Curve
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
6
D = 0.8
5
D = 0.5
D = 0.3
D = 1.0
4
D = 0.1
3
T
2
D = 0.2
10 000
Instantaneous Reverse Current (µA)
Average Power Loss (W)
1000
T
J
= 150 °C
100
T
J
= 125 °C
10
1
1
T
J
= 25 °C
0.1
D = t
p
/T
t
p
0
0
1
2
3
4
5
6
10
20
30
40
50
60
70
80
90
100
Average Forward Current (A)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 2. Forward Power Loss Characteristics Per Diode
Figure 5. Typical Reverse Characteristics Per Diode
100
100
T
J
= T
J
max.
10 ms Single Half Sine-Wave
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Peak Forward Surge Current (A)
10
Junction Capacitance (pF)
1
10
100
10
1
1
0.1
1
10
100
Number
of Cycles
Reverse
Voltage
(V)
Figure 3. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 88967
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
New Product
U(F,B)10BCT thru U(F,B)10DCT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
45° REF.
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.600 (15.24)
0.580 (14.73)
PIN
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2
1
2
3
7° REF.
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.191 (4.85)
0.171 (4.35)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
www.vishay.com
4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88967
Revision: 13-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
