DATA SHEET
SEMICONDUCTOR
UF1000CT~UF1008CT
ULT RAFAST SWITCHING RECTIFIERS
VOLTAGE- 50 to 800 Volts CURRENT - 10.0 Ampere
FEATURES
•
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
•
Exceeds environmental standards of
MIL-S-19500/228
•
Low power loss, high efficiency.
•
Low forwrd voltge, high current capability
•
High surge capacity.
•
Ultra fast recovery times, high voltage.
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
PIN1
.177(4.5)
.MAX
.50(12.7)
MAX
.038(0.96)
.019(.5)
2
3
.114(2.9)
.098(2.5)
.269(6.85)
.226(5.75)
.624(15.87)
.548(13.93)
.419(10.66)
MAX
DIA
.139(3.55)
.
MIN
TO-220AB
Unit:inch(mm)
.196(5.0)
.163(4.16)
.054(1.39)
.045(1.15)
.100(2.54)
MECHANCALDATA
•
Case: TO-220AB full molded plastic package
•
Terminals: Lead solderable per MIL-STD-202, Method 208
•
Polarity: As marked.
•
Standard packaging: Any
•
Weight: 0.08 ounces, 2.24grams.
Positive CT
AC
AC
.025(0.65)
MAX
+
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
UF1000CT UF1001CT UF1002CT UF1003CT UF1004CT UF1006CT UF1008CT
UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maxi mum DC Blocking Voltage
Maximum Average Forward Rect if ied Current at Tc=1 00°C
Peak For ward Surge Current ,
8.3 ms single half sine- wave
superimposed on rated load (J EDEC method)
Maximum Instantaneous Forward Vol tage
at 5.0A per element
Maxi mum DC Reverse Current (Note 1) Ta=25° C
at Rated DC Block ing Vol tage Ta=125°C
Maxi mum DC Reverse Cur rent (Note 1)
at Rated DC Block ing Voltage
Ta=25°C
Ta=125°C
50
50
15
-55 to +150
1.0
10
500
100
75
1.30
1.70
V
125
A
50
35
50
100
70
100
200
140
200
300
210
300
10
400
280
400
600
420
600
800
560
800
V
V
V
A
µA
pF
ns
°C/W
°C
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance Note RθJC
Oper ati ng and Storage Temperature Range TJ
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Thermal resistance from Junction to ambient and from junction to lead 0.375” (9.5mm) P.C.B mounted.
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REV.02 20110725
RATINGAND CHARACTERIS TICCURVES
UF1000CT~UF1008CT
t
rr
+0.5A
50
Noninductive
10
Noninductive
(-)
0
-0.25
(+)
25Vdc
(approx)
(-)
PULSE
GENERATOR
NOTE 2
1
Non
inductive
(+)
OSCILLOSCCOPE
NOTE 1
NOTES:
1.Rise T
ime=7ns m
ax
Input Impedance=1 m
egohm. 22pF
-1.0
SET TIME BASE
FOR10ns/cm
2. Rise T
ime=10ns m
ax.
Source Impedance = 5 O
0 hms
1cm
Fig.1-REVERSERECOVERY TIME CHARACTERISTIC AND TEST CIRCUITDIAGRAM
100
AV E R A G E F O R WA R DC U R R E N T
12.5
10.0
7.5
5.0
2.5
0
0
150
300-400V
INSTANEOUS F RWARD C URRENT,(A)
O
10
50-200V
600-800V
1
50
100
CASE TEMPERATURE,
O
C
0.1
T=25 C
J
O
Fig.3-FORWARD CURRENTDERA
TING CURVE
FORWARD SURGE C RRENT, AMPERES
U
140
120
100
80
0.01
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD V
OLTAGE , VOLTS
Fig. 2- FORWARD CHARACTERISTICS
1000
60
40
20
IR- REVERSE L AKAG E CURRENT M IC RO AM PERES
E
.
100
T
J
= 125 C
O
1
NUMBER O F C
YCLES AT 60Hz
10
100
Fig.4-PEAK FORWARD SURGE CURRENT
240
10
C A PA C I T N C E ,p F
A
200
160
120
80
40
0
1
2
5
10
20
50 100 200
500
T
J
= 25 C
O
1.0
T
J
= 25 C
O
0.1
20
40
60
80
100
120
140
REVERSE VOLTAGE, OLTS
V
Fig.5- TYPICAL REVERSE CHARACTERISTICS
%o f PIV. VOLTS
Fig.6-TYPICAL JUNCTION CAPACIT ANCE
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