TA 33
Vishay Sfernice
Dual Value Chip Resistors, Center Tap
FEATURES
•
Center tap feature
•
Resistor material: self-passivating
Tantalum Nitride
•
Silicon substrate for good power dissipation
•
Low cost
Actual Size
•
Wirebondable
These tantalum chips combine excellent stability 0.07 %
(2000 h, rated power at + 70
°C)
with great power handling
capacity. Two bonding pads per termination allow greater
flexibility in hybrid layout design.
TYPICAL PERFORMANCE
ABS
TCR
100 ppm/°C
ABS
TOL.
0.5 %
TRACKING
5 ppm/°C
RATIO
0.5 %
SCHEMATIC
R
T
R
1
R
2
R
T
= R
1
+ R
2
with
R
1
= R
2
Standard
STANDARD ELECTRICAL SPECIFICATIONS
TEST
MATERIAL
Resistance range
Tracking
TCR:
Absolute
Ohmic value
Tolerance:
Matching
Power dissipation
Stability
Working voltage
Operating temperature range
Storage temperature range
Noise
Thermal EMF
Shelf life stability
± 0.5 % standard
250 mW at + 25 °C, 125 mW at + 70 °C, 50 mW at + 125 °C
± 0.07 % typical, ± 0.1 maximum
50 V
DC
on R
T
- 55 °C to + 155 °C
- 55 °C to + 155 °C
< - 35 dB typical
0.01 µV/°C
100 ppm
1 year at + 25 °C
MIL-STD-202 Method 308
2000 h at + 70 °C under Pn
Ratio
Absolute
± 100 ppm/°C (± 50 ppm/°C on request)
1/1 standard (unequal values: please consult)
± 0.5 %, ± 1 %, ± 2 %
- 55 °C to + 155 °C
SPECIFICATIONS
TANTALUM NITRIDE
50
Ω
to 1 MΩ
± 5 ppm/°C
for R
T
= R
1
+ R
2
- 55 °C to + 155 °C
CONDITIONS
* Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902
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42
For technical questions, contact: sfer@vishay.com
Document Number: 60066
Revision: 06-Oct-08
TA 33
Dual Value Chip Resistors, Center Tap
Vishay Sfernice
DIMENSIONS
DIMENSION
B
INCHES
0.03 ± 0.004
0.03 ± 0.004
0.01 ± 0.015
0.004
0.006
0.006
MILLIMETERS
0.76 ± 0.10
0.76 ± 0.10
0.25 ± 0.40
0.10
0.15
0.15
Bonding Pad Area
D
A
B
C
A
E
C
F
D
E
F
MECHANICAL SPECIFICATIONS
Resistive element
Substrate material
Passivation
Bonding pads
Tantalum Nitride
Silicon
Autopassivation
Aluminum
GLOBAL PART NUMBER INFORMATION
New Global Part Numbering: TA33-5K2F25KD0016 (preferred part number format)
T
A
3
3
-
5
K
2
F
2
5
K
D
0
0
1
6
GLOBAL MODEL
R1 VALUE
Decimal
R, K or M
ABS. TOLERANCE
D
= ± 0.5 %
F
= ± 1.0 %
G
= ± 2.0 %
R2 VALUE
Decimal
R, K or M
RAT. TOLERANCE
D
= ± 0.5 %
OPTION
leave blank if no
option
Historical Part Number example: TA 33 5K2 25K 1 % 0.5 % R0016 (will continue to be accepted)
TA 33
HISTORICAL MODEL
5K2 25K
R1/R2 VALUE
1 % 0.5 %
ABS. TOLERANCE
AND RATIO TOLERANCE
R0016
OPTION
Document Number: 60066
Revision: 06-Oct-08
For technical questions, contact: sfer@vishay.com
www.vishay.com
43
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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