TAT7430B
CATV 75
Ω
pHEMT High Gain RF Amplifier
Applications
Single-ended and Push-pull Optical Receivers
Low-noise Drop Amplifiers
Distribution Amplifiers
Multi-Dwelling Units
Single-ended Gain Block
SOT-89 package
Product Features
High typical gain of 22 dB in application circuit
On-chip active bias for consistent bias current and
repeatable performance
50 – 1200 MHz bandwidth
Low noise: typical NF < 2.2 dB to 1000MHz
Flexible 5 V to 8 V biasing
I
DD
(8V) = 190 mA typical in application circuit
+41 dBm typical OIP3
+65 dBm typical OIP2
+22 dBm typical P1dB
Low distortion: CSO -61 dBc, CTB -81 dBc
(10 dBmV/ch at input, 80 ch NTSC flat)
pHEMT device technology
SOT-89 package
Functional Block Diagram
RF IN
GND
RFOUT
General Description
The TAT7430B is a low cost RF amplifier designed for
applications from DC to 1200 MHz. The balance of low
noise and distortion provides an ideal solution for a wide
range of broadband amplifiers used in cable television
applications.
It is particularly well suited for new home networks
requiring higher gain for a large number of splits. In
addition, the TAT7430B’s combination of high gain, low
noise, and good return loss make it an excellent choice for
optical receiver applications and low noise front ends.
An internal bias circuit mitigates the effect of temperature
and process variation. The bias current can be adjusted
with an external resistor. It is able to work in low noise
applications from a 5 V supply.
The TAT7430B is fabricated using 6-inch GaAs pHEMT
technology to optimize performance and cost. It provides
excellent gain and return loss consistency inherent to the
pHEMT process.
Pin Configuration
Pin #
1
2
3
4
Symbol
RF IN
GND
RF OUT
GND PADDLE
Ordering Information
Part No.
TAT7430B
TAT7430B-EB
75
High linearity pHEMT amplifier
(lead-free/RoHS compliant SOT-89 Pkg)
Description
Amplifier evaluation board
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev B 03/08/11
© 2011 TriQuint Semiconductor, Inc.
-
1 of 7
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Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
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TAT7430B
CATV 75
Ω
pHEMT High Gain RF Amplifier
Specifications
Absolute Maximum Ratings
1
Parameter
Storage Temperature
Device Voltage
Recommended Operating Conditions
o
Rating
Parameter
V
cc
I
cc
T
J
(for >10
6
hours MTTF)
Min
5
Typ
190
Max Units
8
150
V
mA
o
C
-65 to +150 C
+10 V
1. Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC case temp, +8V Vsupply, DC to 1200 MHz
Parameter
Operational Frequency Range
Gain
Gain Flatness
Noise Figure at 1 GHz
Input Return Loss
Output Return Loss
P1dB
Output IP3
Output IP2
CSO
CTB
Idd
Thermal Resistance (jnc. to case)
jc
Conditions
Min
50
Typical
22
+/- 0.5
2.0
-22
-18
+22
+41
+65
-61
-81
190
Max
1002
Units
MHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBc
dBc
mA
o
C/W
See Note 1.
See Note 1.
See Note 2.
See Note 2.
32
Notes:
1. At -21 dBm/tone at input.
2. 10 dBmV/ch at input, 80 ch flat NTSC
3. Electrical specifications are measured at specified test conditions.
4. Specifications are not guaranteed over all recommended operating conditions.
Data Sheet: Rev B 03/08/11
© 2011 TriQuint Semiconductor, Inc.
-
2 of 7
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TAT7430B
CATV 75
Ω
pHEMT High Gain RF Amplifier
Reference Design DC-1200 MHz
Notes:
1.
See PC Board Layout, page 5 for more information
Bill of Material
Ref Des Value Description
U1
R1, R2
R3
R4
C1
C2
C3, C4, C6
C5
L1, L2
L3
L4
Amplifier, SOT-89
20
Ω
Thick Film Res., 1206, 1%, 1/4 W
15 kΩ
Thick Film Res., 0402, 5%, 1/10 W
5.1
Ω
Thick Film Res., 0402, 5%, 1/10 W
150 pF Ceramic Cap, 0603, COG, 16V, 5%
220 pF Ceramic Cap, 0402, COG, 16V, 5%
0.01 uF Ceramic Cap, 0603, X7R, 50V, 10%
47 pF
Ceramic Cap, 0402, COG, 16V, 5%
500 nH Ferrite Ind., Vertical Wire-Wound, 1206, 10%
5.6 nH Ceramic Wire-Wound Ind, 0402, 5%
7.5 nH Ceramic Wire-Wound Ind, 0402, 5%
Manufacturer Part Number
TriQuint
various
various
various
various
various
various
various
various
various
various
TAT7430B
Data Sheet: Rev B 03/08/11
© 2011 TriQuint Semiconductor, Inc.
-
3 of 7
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TAT7430B
CATV 75
Ω
pHEMT High Gain RF Amplifier
Application Board Typical Performance
Case temperature noted on graphs. Vsupply = 8V, Icc=190 mA.
25
23
21
19
17
15
50
250
450
650
850
1050
1250
-40
°
C
+85
°
C
+25
°
C
Gain
-6
-12
Input Return Loss
S21 (dB)
S11 (dB)
-18
-24
-30
-36
+85
°
C
+25
°
C
−40
°
C
50
250
450
650
850
1050
1250
Frequency (MHz)
Frequency (MHz)
0
-6
-12
-18
-24
-30
50
250
Output Return Loss
+85
°
C
+25
°
C
−40
°
C
-55
-60
CSO
+25
°
C
+85
°
C
−40
°
C
CSO (dBc)
1250
S22 (dB)
-65
-70
-75
-80
450
650
850
1050
60
160
260
360
460
560
Frequency (MHz)
Frequency (MHz)
-70
-74
CTB
+85
°
C
+25
°
C
−40
°
C
4
Noise Figure
3
CTB (dBc)
NF (dB)
-78
-82
-86
-90
60
160
260
360
2
1
+85
°
C
+25
°
C
−40
°
C
50
250
450
650
850
1050
1250
0
460
560
Frequency (MHz)
Frequency (MHz)
Data Sheet: Rev B 03/08/11
© 2011 TriQuint Semiconductor, Inc.
-
4 of 7
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TAT7430B
CATV 75
Ω
pHEMT High Gain RF Amplifier
Applications Information
PC Board Layout
Core is .062” FR-4,
є
r
= 4.7 at 1 MHz. Metal layers are
1-oz copper.
The pad pattern shown has been developed and tested for
optimized assembly at TriQuint Semiconductor. The PCB
land pattern has been developed to accommodate lead and
package tolerances. Since surface mount processes vary
from company to company, careful process development
is recommended.
For
further
technical
information,
http://www.triquint.com/TAT7430B
Refer
to
Data Sheet: Rev B 03/08/11
© 2011 TriQuint Semiconductor, Inc.
-
5 of 7
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
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