P Channel Enhancement Mode MOSFET
STP3481
-5.2A
DESCRIPTION
The STP3481 is the P-Channel logic enhancement mode power field effect transistors
are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery powered circuits, and
low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
TSOP-6P
FEATURE
-30V/-5.2A, R
DS(ON)
= 55m-ohm
@VGS = -10V
-30V/-4.2A, R
DS(ON)
= 75m-ohm
@VGS = -4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
TSOP-6P package design
1.2.5.6.Drain
PART MARKING
TSOP-6P
3.Gate
4.Source
Y: Year Code
A: Process Code
ORDERING INFORMATION
Part Number
STP3481S6RG
※
Process Code : A ~ Z ; a ~ z
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1
Package
TSOP-6P
Part Marking
81YA
P Channel Enhancement Mode MOSFET
STP3481
-5.2A
※
STP3481S6RG
S6 : TSOP-6P ; R : Tape Reel ; G : Pb – Free
ABSOULTE MAXIMUM RATINGS
(Ta = 25
℃
Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150
℃
)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=70
℃
T
A
=25℃
T
A
=70
℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Typical
-30
±
20
-5.2
-4.2
-20
-1.7
2.0
1.3
150
-55/150
90
Unit
V
V
A
A
A
W
℃
℃
℃
/W
2
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1
P Channel Enhancement Mode MOSFET
STP3481
-5.2A
ELECTRICAL CHARACTERISTICS
( Ta = 25
℃
Unless otherwise noted )
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
tr
Symbol
Condition
Min Typ Max Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
GS
=0V,I
D
=-250
u
A
V
DS
=V
GS
,I
D
=-250uA
V
DS
=0V,V
GS
=
±
20V
V
DS
=-24V,V
GS
=0V
V
DS
=-24V,V
GS
=0V
T
J
=55
℃
V
DS
≦-
5V,V
GS
=-10V
V
GS
=-10.0V,I
D
=-5.2A
V
GS
=-4.5V,I
D
=-4.2A
V
DS
=-5.0V,I
D
=-4.0A
I
S
=-1.0A,V
GS
=0V
-30
-1.0
-3.0
±
100
-1
-10
-10
0.041 0.055
0.058 0.075
V
V
Na
UA
A
Ω
S
V
10
-0.8 -1.2
V
DS
=-15V
V
GS
=-10V
I
D
≣
-4.0A
V
DS
=-15V
V
GS
=0V
F=1MH
z
V
DD
=-15V
R
L
=15
Ω
I
D
=-1.0A
V
GEN
=-10V
R
G
=6
Ω
14
1.9
3.7
540
131
105
10
15
32
21
21
nC
pF
16
25
50
32
nS
t
d(off)
tf
3
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1
P Channel Enhancement Mode MOSFET
STP3481
-5.2A
TYPICAL CHARACTERICTICS
(25
℃
Unless noted)
4
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1
P Channel Enhancement Mode MOSFET
STP3481
-5.2A
TYPICAL CHARACTERICTICS
(25
℃
Unless noted)
5
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1
嵌入式系统
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