SSY5829P
Elektronische Bauelemente
-2.5 A, -20 V, R
DS(ON)
0.110
P-Channel Enhancement MOSFET
With Schottky Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
R
DS(on)
and to ensure minimal power loss and
heat dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers,PCMCIA cards, cellular and cordless telephones.
1206-8CF
FEATURES
Low R
DS(on)
provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
1206-8CF saves board space.
Fast switching speed.
High performance trench technology.
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
1206-8CF
MPQ
3K
LeaderSize
7’ inch
Millimeter
Min.
Max.
2.00
2.10
3.00
3.05
3.00
3.05
0.65
0.70
1.95
2.00
0.70
0.90
REF.
M
a
b
L
L1
Millimeter
Min.
Max.
0.08
0.25
1.70
1.73
0.24
0.35
0.20
0.40
0
0.1
C
C
D
D
A
A
S
G
Unit
V
V
V
A
A
A
A
A
W
°C
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current(T
J
=150°C )(MOSFET)
1
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
KA
V
GS
I
D
I
DM
I
S
I
F
I
FM
P
D
T
J
, T
STG
50
90
Ratings
-20
20
±8
-2.5
-1.9
-10
-1.6
0.5
8
2.1
1.1
1.3
0.68
-55 ~ 150
60
110
Pulsed Drain Current (MOSFET)
2
Continuous Source Current (MOSFET Diode Conduction)
1
Average Forward Current (Schottky)
Pulse Forward Current (Schottky)
T
A
=25°C
Maximum Power Dissipation (MOSFET)
1
T
A
=70°C
T
A
=25°C
Maximum Power Dissipation (Schottky)
1
T
A
=70°C
Operating Junction and Storage Temperature Range
Maximum Junction to Ambient
1
Notes:
1.
2.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
Thermal Resistance Ratings
t≦5 sec
Steady State
R
θJA
°C/W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. B
Page 1 of 4
SSY5829P
Elektronische Bauelemente
-2.5 A, -20 V, R
DS(ON)
0.110
P-Channel Enhancement MOSFET
With Schottky Diode
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-State Resistance
1
Forward Transconductance
1
Diode Forward Voltage
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
FS
V
SD
-0.4
-
-
-
-5
-
-
-
-
-
-
-
-
-
-
-
3
-0.70
-
±100
-1
-10
-
0.110
0.160
-
-
V
nA
μA
A
Ω
S
V
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 0V, V
GS
= ±8V
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
=55
°C
V
DS
= -5V, V
GS
= -4.5V
V
GS
= -4.5V, I
D
= -3.6A
V
GS
= -2.5V, I
D
= -3.0A
V
DS
= -5V,
,
I
D
= -3.6A
I
S
= -1.6A, V
GS
=0V
Typ.
Max.
Unit
Teat Conditions
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
Td
(ON)
T
r
Td
(OFF)
T
f
-
-
-
-
-
-
-
6.0
0.80
1.30
6.5
20
31
21
-
-
-
-
-
-
-
nS
nC
I
D
= -3.6A
V
DS
= -5V
V
GS
= -4.5V
V
DD
= -5V
V
GEN
= -4.5V
R
G
= 6Ω
R
L
= 5Ω
SCHOTTKY SPECIFICATIONS
(T
A
=25°C unless otherwise specified)
Parameter
Forward Voltage Drop
1
Symbol
V
F
Min.
-
-
-
Maximum Reverse Leakage Current
I
RM
-
-
Junction Capacitance
Notes:
1.
2.
Pulse test：PW
≦
300 us duty cycle
≦
2%.
Guaranteed by design, not subject to production testing.
Typ.
-
-
-
-
-
31
Max.
0.48
0.4
0.1
1
10
-
Unit
V
Teat Conditions
IF= 0.5A
IF= 0.5A, T
J
=125°C
Vr= 30V
mA
Vr= 30V, T
J
=75°C
Vr= 30V, T
J
=125°C
Vr= 10V
C
T
-
pF
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. B
Page 2 of 4
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