电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SM8S18A

产品描述6600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AA
产品类别分立半导体    二极管   
文件大小92KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

SM8S18A概述

6600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AA

SM8S18A规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Vishay(威世)
Reach Compliance Codeunknow
击穿电压标称值21.05 V
最大钳位电压29.2 V
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码e0
极性UNIDIRECTIONAL
最大重复峰值反向电压18 V
表面贴装YES
端子面层Tin/Lead (Sn/Pb)

文档预览

下载PDF文档
SM8S10 thru SM8S43A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• T
J
= 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
6600 W
5200 W
8W
10 V to 43 V
700 A
175 °C
Uni-directional
DO-218AB
DO-218AB
PRIMARY CHARACTERISTICS
V
BR
P
PPM
(10 x 1000 μs)
P
PPM
(10 x 10 000 μs)
P
D
V
WM
I
FSM
T
J
max.
Polarity
Package
11.1 V to 52.8 V
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case:
DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
Heatsink is anode
per
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
with 10/1000 μs waveform
Peak pulse power dissipation
with 10/10 000 μs waveform
Power dissipation on infinite heatsink at T
C
= 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Note
(1)
Non-repetitive current pulse derated above T = 25 °C
A
P
PPM
P
D
I
PPM (1)
I
FSM
T
J
, T
STG
SYMBOL
VALUE
6600
W
5200
8.0
See next table
700
-55 to +175
W
A
A
°C
UNIT
Revision: 18-Sep-12
Document Number: 88387
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 910  1187  2633  543  1571  53  47  44  21  3 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved