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SM5817

产品描述1 A, 20 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小759KB,共2页
制造商Kingtronics
官网地址http://www.kingtronics.com
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SM5817概述

1 A, 20 V, SILICON, SIGNAL DIODE

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Website: www.kingtronics.com
Email: info@kingtronics.com
Tel: (852) 8106 7033
Fax: (852) 8106 7099
SM5817 THRU SM5819
SURFACE MOUNT SCHOTTKY RECTIFIERS
FEATURES
◆Low
power loss, high efficient
◆High
surge current capability
◆Low
forward voltage drop
◆For
use in low voltage, high frequency inverters,
free wheeling application
◆Guarding
for over voltage protection
DO-213AB/MELF
Mechanical Data
◆Case:
Molded plastic use UL94V-0 recognized
flame retardant epoxy
Terminals: Solder plated, solderable
per MIL-STD-750 Method 2026
Dimensions in inches and (millimeters)
Polarity: Blue color band on body denotes Cathode
Mounting Position: Any
Weight: 0.12 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ Ambient temp. Unless otherwise specified.Single phase, half sine wave, 60HZ,resistive or inductive load.
For capacitive load, derate current by 20%
SYMBOL
Maximum Current Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified current
Peak Forward Surge current, 8.3 ms Single
SM5817
20
14
20
SM5818
30
24
30
1.0
SM5819
40
28
40
UNITS
Volts
Volts
Volts
Amps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
25.0
Amps
Half Sine-wave Superimposed on Rated Load (JEDEC Method)
Maximum Instantaneous Forward Voltage at1.0DC
Maximum DC Reverse Current @ T
A
=25℃
Vf
I
R
0.45
0.55
0.5
0.6
Volts
mA
10.0
at Rated DC Blocking Voltage @ T
A
=125℃
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
C
J
R
θJA
T
STG,
T
J
110.0
15.0
-55 to+125/-65 to +150
80
Pf
℃/W
NOTES : 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Thermal Resistance from Junction to Ambient
1

SM5817相似产品对比

SM5817 SM5819
描述 1 A, 20 V, SILICON, SIGNAL DIODE 1 A, 40 V, SILICON, SIGNAL DIODE

 
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