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SM4006

产品描述1 A, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小111KB,共2页
制造商FRONTIER
官网地址http://www.frontierusa.com/
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SM4006概述

1 A, SILICON, SIGNAL DIODE

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Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998
FAX: (805) 522-9989
E-mail:
frontiersales@frontierusa.com
Web:
http://www.frontierusa.com
1A SURFACE MOUNT SILICON RECTIFIERS
SM4001 THRU SM4007
FEATURES
GLASS PASSIVATED JUNCTION
IDEAL FOR SURFACE MOUNTED APPLICATIONS
LOW LEAKAGE CURRENT
UL 94V-0 FLAME RETARDANT EPOXY MOLDING COMPOUND
SOLDERABLE ENDS
.105(2.67)
.095(2.41)
.022(.60)
.018(.46)
MECHANICAL DATA
CASE: TRANSFER MOLDED, MELF, DIMENSIONS
IN INCHES AND (MILLIMETERS)
TERMINALS: SOLDERABLE PER MIL-STD-750, METHOD 2026
POLARITY: CATHODE INDICATED BY COLOR BAND
WEIGHT: 0.135 GRAMS
.205(5.2)
.190(4.8)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED
SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD. FOR CAPACITIVE LOAD, DERATE CURRENT BY 20%
RATINGS
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE
MAXIMUM RMS VOLTAGE
MAXIMUM DC BLOCKING VOLTAGE
MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT
AT SEE FIG.1
PEAK FORWARD SURGE CURRENT, 8.3ms SINGLE HALF
SINE-WAVE SUPERIMPOSED ON RATED LOAD
TYPICAL JUNCTION CAPACITANCE (NOTE 1)
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE
SYMBOL SM4001 SM4002 SM4003 SM4004 SM4005 SM4006 SM4007 UNITS
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
STG
T
OP
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
15
- 55 TO + 175
- 55 TO + 175
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
PF
ELECTRICAL CHARACTERISTICS (A
T
T
A
=25°C UNLESS OTHERWISE NOTED)
CHARACTERISTICS
MAXIMUM FORWARD VOLTAGE AT Io DC
MAXIMUM DC REVERSE CURRENT
SYMBOL SM4001 SM4002 SM4003 SM4004 SM4005 SM4006 SM4007 UNITS
V
F
I
R
1.1
5
V
μA
NOTE: 1. MEASURED AT 1.0 MHZ AND APPLIED REVERSE VOLTAGE OF 4.0 V
SM4001 THRU SM4007
Page: 1

SM4006相似产品对比

SM4006 SM4001 SM4002 SM4003 SM4005 SM4007 SM4004
描述 1 A, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, SILICON, SIGNAL DIODE SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE
端子数量 - 2 2 2 - - 2
元件数量 - 1 1 1 - - 1
状态 - DISCONTINUED DISCONTINUED ACTIVE - ACTIVE DISCONTINUED
包装形状 - 矩形的 ROUND - - 矩形的
包装尺寸 - SMALL OUTLINE LONG FORM LONG FORM - - SMALL OUTLINE
表面贴装 - Yes Yes Yes - - Yes
端子形式 - C BEND WRAP AROUND WRAP AROUND - - C BEND
端子位置 - END END - -
包装材料 - 塑料/环氧树脂 塑料/环氧树脂 PLASTIC/EPOXY - - 塑料/环氧树脂
结构 - 单一的 单一的 SINGLE - - 单一的
二极管元件材料 - SILICON - -
二极管类型 - 信号二极管 信号二极管 SIGNAL DIODE - 信号二极管 信号二极管
最大重复峰值反向电压 - 50 V 100 V 200 V - - 400 V
最大平均正向电流 - 1 A 1 A 1 A - - 1 A

 
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