Total Power Dissipation on FR−5 Board (Note 2) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Power Dissipation on Alumina Substrate (Note 3) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Lead Solder Temperature − Maximum (10 Second Duration)
°P
D
°
R
qJA
°P
D
R
qJA
T
J
, T
stg
T
L
Symbol
P
pk
Value
300
±15
±26
40
12
225
1.8
556
300
2.4
417
− 55 to +150
260
Unit
W
kV
A
A
°mW°
mW/°C
°C/W
°mW
mW/°C
°C/W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 3
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
NOTE: Other voltages may be available upon request
ELECTRICAL CHARACTERISTICS
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
I
F
V
F
Z
ZT
I
ZK
Z
ZK
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Coefficient of V
BR
Forward Current
Forward Voltage @ I
F
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
I
PP
V
C
V
BR
V
RWM
I
R
V
F
I
T
V
I
F
I
Uni−Directional
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
V
BR
, Breakdown Voltage
V
RWM
Device*
SM05T1G
SM12T1G
SM15T1G
SM24T1G
SM36T1G
Device
Marking
05M
12M
15M
24M
36M
(Volts)
5
12
15
24
36
I
R
@ V
RWM
(mA)
10
1.0
1.0
1.0
1.0
Min
6.2
13.3
16.7
26.7
40.0
(Volts)
Max
7.3
15.75
19.6
31.35
46.95
I
T
mA
1.0
1.0
1.0
1.0
1.0
V
C
@
I
PP
=
1 Amp
(Volts)
9.8
19
24
43
60
Max I
PP
(Note 4)
(Amps)
17
12
10
5.0
4.0
Typical
Capacitance
(pF)
Pin 1 to 3
@ 0 Volts
225
95
100
60
45
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. 8/20
ms
pulse waveform per Figure 3
*Include SZ-prefix devices where applicable.
www.onsemi.com
2
SM05T1G Series
TYPICAL CHARACTERISTICS
10
P
PP
, PEAK PULSE POWER (kW)
P
D
, POWER DISSIPATION (mW)
300
250
ALUMINA SUBSTRATE
200
150
100
FR−5 BOARD
50
0
0.1
1
100
10
t
p
, PULSE DURATION (ms)
1000
0
25
50
75
100
125
TEMPERATURE (°C)
150
175
1
0.1
0.01
Figure 1. Non−Repetitive Peak Pulse Power
versus Pulse Time
Figure 2. Steady State Power Derating Curve
100
% OF PEAK PULSE CURRENT
90
80
70
60
50
40
30
20
10
0
t
P
t
r
PEAK VALUE I
RSM
@ 8
ms
C, CAPACITANCE (pF)
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE I
RSM
/2 @ 20
ms
250
210
170
130
90
0
20
40
t, TIME (ms)
60
80
0
1
2
3
BIAS VOLTAGE (VOLTS)
4
5
Figure 3. 8/20
ms
Pulse Waveform
Figure 4. Typical Diode Capacitance (SM05)
100
90
C, CAPACITANCE (pF)
80
70
60
50
40
30
20
10
0
0
1
5
8
BIAS VOLTAGE (VOLTS)
12
Figure 5. Typical Diode Capacitance (SM12)
www.onsemi.com
3
SM05T1G Series
TYPICAL COMMON ANODE APPLICATIONS
A quad junction common anode design in a SOT−23
package protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of surge protection applications are illustrated below.
Computer Interface Protection
A
KEYBOARD
TERMINAL
PRINTER
ETC.
B
I/O
C
D
FUNCTIONAL
DECODER
GND
SM05T1G
Series
Microprocessor Protection
V
DD
V
GG
ADDRESS BUS
RAM
ROM
DATA BUS
I/O
CPU
CLOCK
CONTROL BUS
SM05T1
Series
GND
SM05T1G
Series
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4
SM05T1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
D
0.25
3
E
1
2
HE
L
3X
b
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and
hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
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