SPICE Device Model Si2331DS
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
CHARACTERISTICS
•
P-Channel Vertical DMOS
•
Macro Model (Subcircuit Model)
•
Level 3 MOS
•
Apply for both Linear and Switching Application
•
Accurate over the
−55
to 125°C Temperature Range
•
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
−55
to 125°C
temperature ranges under the pulsed 0 to 5V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72307
30-Apr-04
www.vishay.com
1
SPICE Device Model Si2331DS
Vishay Siliconix
SPECIFICATIONS (T
J
= 25°C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
On-State Drain Current
a
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
V
GS(th)
I
D(on)
V
DS
= V
GS
, I
D
=
−250 µA
V
DS
=
−5
V, V
GS
=
−4.5
V
V
GS
=
−4.5
V, I
D
=
−3.6
A
0.72
94
0.035
0.046
0.062
14
−0.80
0.038
0.049
0.070
3
V
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
−2.5
V, I
D
=
−3.2 Α
V
GS
=
−1.8
V, I
D
=
−2.7 Α
Ω
Forward Transconductance
Diode Forward Voltage
a
a
g
fs
V
SD
V
DS
=
−5
V, I
D
=
−
3.6 A
I
S
=
−1.6
V, V
GS
= 0 V
S
V
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
=
−6
V, R
L
= 6
Ω
I
D
≅ −1
A, V
GEN
=
−10
V, R
G
= 6
Ω
V
DS
=
−6
V, V
GS
=
−4.5
V, I
D
=
−3.6
A
8.2
1.3
2.5
20
21
66
15
9
1.3
2.5
20
35
65
50
ns
nC
Notes
a. Pulse test; pulse width
≤
300
µs,
duty cycle
≤
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 72307
30-Apr-04
SPICE Device Model Si2331DS
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (T
J
=25°C UNLESS OTHERWISE NOTED)
Document Number: 72307
30-Apr-04
www.vishay.com
3
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