Si2321DS
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 20
FEATURES
D
TrenchFETr Power MOSFETS
I
D
(A)
- 3.3
- 2.8
- 2.3
r
DS(on)
(W)
0.057 @ V
GS
= - 4.5 V
0.076 @ V
GS
= - 2.5 V
0.110 @ V
GS
= - 1.8 V
APPLICATIONS
D
Load Switch
D
PA Switch
TO-236
(SOT-23)
G
1
3
S
2
D
Ordering Information: Si2321DS-T1
Top View
Si2321DS *(D1)
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
- 0.74
0.89
0.57
- 55 to 150
Symbol
V
DS
V
GS
5 sec
- 20
"8
- 3.3
- 2.6
- 12
Steady State
Unit
V
- 2.9
- 2.3
A
- 0.59
0.71
0.45
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
5 sec.
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board.
b. t
v5
sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72210
S-03986—Rev. A, 19-May-03
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
115
140
60
Maximum
140
175
75
Unit
_C/W
1
Si2321DS
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 10
mA
V
DS
= V
GS
, I
D
= - 250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 55_C
V
DS
v
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 3.3 A
Drain-Source On-Resistance
a
r
DS(on)
( )
V
GS
= - 2.5 V, I
D
= - 2.8 A
V
GS
= - 1.8 V, I
D
= - 2.3 A
Forward Transconductance
a
Diode Forward Voltage
g
fs
V
SD
V
DS
= - 5 V, I
D
= - 3.3 A
I
S
= - 1.6 A, V
GS
= 0 V
-6
0.044
0.061
0.084
3
- 1.2
0.057
0.076
0.110
S
V
W
- 20
- 0.40
- 0.90
"100
-1
- 10
mA
A
V
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= - 6 V, V
GS
= 0, f = 1 MHz
V
DS
= - 6 V, V
GS
= - 4.5 V
I
D
^
- 3.3 A
8
1.2
2.2
715
170
120
pF
13
nC
Switching
b
t
d(on)
Turn-On
Turn On Time
t
r
t
d(off)
t
f
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
v300
ms
duty cycle
v2%.
Switching time is essentially independent of operating temperature.
V
DD
= - 6 V, R
L
= 6
W
I
D
^
- 1 0 A V
GEN
= - 4.5 V
1.0 A,
45
R
G
= 6
W
15
35
60
40
25
55
ns
90
60
Turn-Off Time
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2
Document Number: 72210
S-03986—Rev. A, 19-May-03
Si2321DS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
12
V
GS
= 4.5 thru 2.5 V
10
2V
10
12
Vishay Siliconix
Transfer Characteristics
I
D
- Drain Current (A)
8
I
D
- Drain Current (A)
8
6
1.5 V
4
6
4
T
C
= 125_C
2
25_C
- 55_C
2
0.5 V
0
0.0
1.0 V
1.6
2.0
0.4
0.8
1.2
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.30
1200
Capacitance
r
DS(on)
- On-Resistance (
W
)
0.25
C - Capacitance (pF)
900
C
iss
0.20
0.15
V
GS
= 1.8 V
0.10
V
GS
= 2.5 V
600
300
C
oss
0.05
V
GS
= 4.5 V
0.00
0
2
4
6
8
10
12
0
0
4
C
rss
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 3.3 A
Normalized On-Resistance vs. Junction Temperature
1.5
V
GS
= 4.5 V
I
D
= 3.3 A
3
r
DS(on)
- On-Resistance (
W)
(Normalized)
4
6
8
10
4
1.3
1.1
2
0.9
1
0.7
0
0
2
0.5
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Document Number: 72210
S-03986—Rev. A, 19-May-03
www.vishay.com
3
Si2321DS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
10
r
DS(on)
- On-Resistance (
W
)
0.4
I
S
- Source Current (A)
0.5
On-Resistance vs. Gate-to-Source Voltage
0.3
T
J
= 150_C
1
T
J
= 25_C
0.2
I
D
= 3.3 A
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0
1
2
3
4
5
6
7
8
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.4
I
D
= 250
mA
8
10
Single Pulse Power
0.3
V
GS(th)
Variance (V)
0.2
Power (W)
6
0.1
4
T
A
= 25_C
0.0
2
- 0.1
- 0.2
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
- Temperature (_C)
Safe Operating Area
100
Limited
by r
DS(on)
10
I
D
- Drain Current (A)
100
ms,
10
ms
1
1 ms
10 ms
100 ms
0.1
T
A
= 25_C
Single Pulse
dc, 100 s, 10 s, 1 s
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
www.vishay.com
Document Number: 72210
S-03986—Rev. A, 19-May-03
4
Si2321DS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 130_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72210
S-03986—Rev. A, 19-May-03
www.vishay.com
5
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