Si2320DS
New Product
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
200
r
DS(on)
(W)
7 @ V
GS
= 10 V
I
D
(A)
"0.28
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
Si2320DS (D0)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
b
Avalanche Current
b
L = 0.1 mH
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
I
S
5 sec
"20
"0.28
"0.22
Steady State
"200
Unit
V
"0.22
"0.17
"0.5
"0.5
0.013
"1
mJ
A
0.75
W
0.48
–55 to 150
_C
A
1.25
P
D
T
J
, T
stg
0.80
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71084
S-63640—Rev. A, 01-Nov -98
www.vishay.com
S
FaxBack 408-970-5600
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
2-1
Si2320DS
Vishay Siliconix
New Product
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
a
Forward Transconductance
a
Diode Forward Voltage
V(
BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 160 V, V
GS
= 0 V
V
DS
= 160 V, V
GS
= 0 V, T
J
= 70_C
V
DS
w
15 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 0.2 A
V
DS
= 15 V, I
D
= 0.4 A
I
S
= 1 A, V
GS
= 0 V
0.5
5.8
13
1.2
7
200
V
2
"100
1
75
nA
mA
A
W
S
V
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
= 100 V, V
GS
= 10 V, I
D
= 0.2 A
V
V
02
1.1
0.31
0.375
1.6
nC
C
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Source-Drain Reverse Recovery Time
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1 A, di/dt = 100 A/ms
V
DD
= 100 V, R
L
= 500
W
V,
I
D
^
0.2 A, V
GEN
= 10 V R
G
= 6
W
02A
V,
6
9
9
65
105
10
15
ns
15
100
160
ns
Notes
a. Pulse test: PW
v300
ms
duty cycle
v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0
V
GS
= 10, 9 V
0.8
I
D
– Drain Current (A)
8V
I
D
– Drain Current (A)
0.8
1.0
Transfer Characteristics
0.6
7V
0.6
0.4
6V
0.2
4, 3 V
0
0
2
4
6
8
10
5V
0.4
T
C
= 125_C
0.2
25_C
0
0
2
4
6
8
10
–55_C
V
DS
– Drain-to-Source Voltage (V)
www.vishay.com
S
FaxBack 408-970-5600
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71084
S-63640—Rev. A, 01-Nov -98
2-2
Si2320DS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
12
r
DS(on)
– On-Resistance (
W
)
70
60
C – Capacitance (pF)
50
40
30
20
C
oss
2
10
0
0
0.2
0.4
0.6
0.8
1.0
0
20
40
60
80
100
C
rss
Vishay Siliconix
Capacitance
10
C
iss
8
V
GS
= 10 V
6
4
0
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
20
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 100 V
I
D
= 0.2 A
16
2.5
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 0.2 A
2.0
12
r
DS(on)
– On-Resistance (
W)
(Normalized)
1.0
1.5
2.0
1.5
8
1.0
4
0.5
0
0
0.5
Q
g
– Total Gate Charge (nC)
0
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10
20
On-Resistance vs. Gate-to-Source Voltage
1
T
J
= 150_C
r
DS(on)
– On-Resistance (
W
)
16
I
D
= 0.2 A
12
I
S
– Source Current (A)
0.1
8
0.01
T
J
= 25_C
4
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71084
S-63640—Rev. A, 01-Nov -98
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si2320DS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.9
60
50
I
D
= 250
mA
0.3
Power (W)
Single Pulse Power
0.6
V
GS(th)
Variance (V)
40
T
A
= 25_C
30
0.0
20
–0.3
10
–0.6
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 166_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
4. Surface Mounted
10
100
600
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 71084
S-63640—Rev. A, 01-Nov -98
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