Si2318DS
New Product
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
40
FEATURES
D
TrenchFETr Power MOSFET
I
D
(A)
3.9
3.5
r
DS(on)
(W)
0.045 @ V
GS
= 10 V
0.058 @ V
GS
= 4.5 V
APPLICATIONS
D
Stepper Motors
D
Load Switch
TO-236
(SOT-23)
G
1
3
D
Ordering Information: Si2318DS-T1 (with Tape and Reel)
S
2
Top View
Si2318DS( C8)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a, b
Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
5 sec
40
"20
3.9
3.1
16
0.8
1.25
0.8
Steady State
Unit
V
3.0
2.4
A
0.75
0.48
- 55 to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
C/W
Document Number: 72322
S-31731—Rev. A, 18-Aug-03
www.vishay.com
1
Si2318DS
Vishay Siliconix
New Product
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
Drain Source On Resistance
a
Forward Transconductance
a
Diode Forward Voltage
V(
BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 32 V, V
GS
= 0 V
V
DS
= 32 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
4.5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 3.9 A
V
GS
= 4.5 V, I
D
= 3.5 A
V
DS
= 10 V, I
D
= 3.9 A
I
S
= 1.25 A, V
GS
= 0 V
6
0.036
0.045
11
0.8
1.2
0.045
0.058
40
1
3
"100
0.5
10
V
nA
mA
A
W
S
V
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
R
g
C
iss
C
oss
C
rss
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 3.9 A
10
1.6
2.1
1.8
540
80
45
p
pF
W
15
nC
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 20 V, R
L
= 20
W
I
D
^
1.0 A, V
GEN
= 10 V, R
G
= 6
W
5
12
20
15
10
20
30
25
ns
Notes
a. Pulse test: PW
v300
ms
duty cycle
v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 10 thru 5 V
16
I
D
- Drain Current (A)
4V
I
D
- Drain Current (A)
16
20
Transfer Characteristics
12
12
8
8
T
C
= 125_C
4
25_C
0
0.0
- 55_C
2.5
3.0
3.5
4.0
4.5
4
1, 2 V
3V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
0.5
1.0
1.5
2.0
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72322
S-31731—Rev. A, 18-Aug-03
www.vishay.com
2
Si2318DS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.08
Vishay Siliconix
On-Resistance vs. Drain Current
800
Capacitance
r
DS(on)
- On-Resistance (
W
)
C - Capacitance (pF)
0.06
V
GS
= 4.5 V
V
GS
= 10 V
600
C
iss
0.04
400
0.02
200
C
oss
C
rss
0.00
0
4
8
12
16
20
0
0
8
16
24
32
40
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 20 V
I
D
= 3.9 A
2.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 3.9 A
8
r
DS(on)
- On-Resistance (
W)
(Normalized)
4
6
8
10
12
1.7
6
1.4
4
1.1
2
0.8
0
0
2
Q
g
- Total Gate Charge (nC)
0.5
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10
0.20
On-Resistance vs. Gate-to-Source Voltage
I
S
- Source Current (A)
T
J
= 150_C
r
DS(on)
- On-Resistance (
W
)
0.16
I
D
= 3.9 A
0.12
1
T
J
= 25_C
0.08
0.04
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72322
S-31731—Rev. A, 18-Aug-03
www.vishay.com
3
Si2318DS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
V
GS(th)
Variance (V)
I
D
= 250
mA
Power (W)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 50
2
6
T
A
= 25_C
10
Single Pulse Power
8
4
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
- Temperature (_C)
100.0
Safe Operating Area, Junction-to-Case
Limited by r
DS(on)
10.0
I
D
- Drain Current (A)
10
ms
100
ms
1.0
1 ms
10 ms
0.1
T
A
= 25_C
Single Pulse
0.01
0.1
1
10
100 ms
dc, 100 s, 10 s, 1 s
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 166_C/W
t
1
t
2
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72322
S-31731—Rev. A, 18-Aug-03
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