Si2314EDS
New Product
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.033 @ V
GS
= 4.5 V
20
0.040 @ V
GS
= 2.5 V
0.051 @ V
GS
= 1.8 V
FEATURES
I
D
(A)
4.9
4.4
3.9
D
TrenchFETr Power MOSFET
D
ESD Protected: 3000 V
APPLICATIONS
D
LI-lon Battery Protection
TO-236
(SOT-23)
D
G
1
3
D
G
3 kW
S
2
Top View
Si2314EDS (C4)*
*Marking Code
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
b
Avalanche Current
b
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
L = 0.1 mH
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
5 sec
20
"12
4.9
Steady State
Unit
V
3.77
3.0
15
15
11.25
1.0
mJ
A
0.75
0.48
–55 to 150
W
_C
A
I
D
I
DM
I
AS
E
AS
I
S
3.9
1.25
P
D
T
J
, T
stg
0.80
THERMAL RESISTANCE RATINGS
Parameter
t
v
5 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71611
S-04683—Rev. B, 10-Sep-01
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
C/W
1
Si2314EDS
Vishay Siliconix
New Product
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V(
BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"4.5
V
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 70_C
V
DS
w
10 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 5.0 A
Drain-Source On-Resistance
a
Transconductance
a
r
DS(on)
g
fs
V
SD
V
GS
= 2.5 V, I
D
= 4.5 A
V
GS
= 1.8 V, I
D
= 4.0 A
Forward
V
DS
= 15 V, I
D
= 5.0 A
I
S
= 1.0 A, V
GS
= 0 V
Diode Forward Voltage
15
0.027
0.033
0.042
40
0.8
1.2
0.033
0.040
0.051
S
V
W
20
0.45
"1.5
1
75
A
m
mA
V
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5.0 A
11.0
1.5
2.1
14.0
nC
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Source-Drain Reverse Recovery Time
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.0 A, di/dt = 100 A/ms
V
DD
= 10 V, R
L
= 10
W
I
D
^
1.0 A, V
GEN
= 4.5 V, R
G
= 6
W
0.53
1.4
13.5
5.9
13
0.8
2.2
20
9
25
ns
ms
m
Notes
a. Pulse test: PW
v300
ms
duty cycle
v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
1200
10,000
1,000
I
GSS
– Gate Current (
mA)
100
10
1
0.1
T
J
= 25_C
0.01
0.001
0
0
2
4
6
8
10
12
0.0001
0.1
1
10
100
T
J
= 150_C
Gate Current vs. Gate-Source Voltage
1000
I
GSS
– Gate Current (mA)
800
600
400
200
V
GS
– Gate-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71611
S-04683—Rev. B, 10-Sep-01
Si2314EDS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
15
V
GS
= 4.5 thru 2.0 V
12
I
D
– Drain Current (A)
I
D
– Drain Current (A)
12
15
Vishay Siliconix
Transfer Characteristics
9
1.5 V
9
6
6
T
C
= 125_C
3
3
0.5 V
0
0
1
2
3
4
1.0 V
25_C
0
0.0
–55_C
1.0
1.5
2.0
0.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15
r
DS(on)
– On-Resistance (
W
)
1500
Capacitance
C – Capacitance (pF)
0.12
1200
C
iss
900
0.09
0.06
V
GS
= 1.8 V
V
GS
= 2.5 V
600
0.03
V
GS
= 4.5 V
0.00
0
3
6
9
12
15
300
C
oss
C
rss
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
8
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 5.0 A
6
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 5.0 A
1.4
r
DS(on)
– On-Resistance (
W)
(Normalized)
1.2
4
1.0
2
0.8
0
0
4
8
12
16
20
Q
g
– Total Gate Charge (nC)
0.6
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Document Number: 71611
S-04683—Rev. B, 10-Sep-01
www.vishay.com
3
Si2314EDS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
10
r
DS(on)
– On-Resistance (
W
)
I
D
= 5.0 A
0.15
I
S
– Source Current (A)
0.20
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
1
0.10
T
J
= 25_C
0.1
0.05
0.01
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.2
12
10
I
D
= 250
mA
Power (W)
–0.0
8
Single Pulse Power
0.1
V
GS(th)
Variance (V)
T
A
= 25_C
6
–0.1
–0.2
4
–0.3
2
–0.4
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 166_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71611
S-04683—Rev. B, 10-Sep-01
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