Si2308BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
Limit
60
± 20
2.3
1.8
1.9
b, c
1.5
b, c
8
1.39
0.91
b, c
6
1.8
1.66
1.06
1.09
b, c
0.7
b, c
- 55 to 150
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
≤
5s
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 130 °C/W.
Document Number: 69958
S-83053-Rev. B, 29-Dec-08
Symbol
R
thJA
R
thJF
Typical
90
60
Maximum
115
75
Unit
°C/W
www.vishay.com
1
New Product
Si2308BDS
Vishay Siliconix
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 1.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 1.5 A
0.8
15
10
12
3
T
C
= 25 °C
1.39
8
1.2
23
15
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 20
Ω
I
D
=
1.5 A, V
GEN
= 4.5 V, R
G
= 1
Ω
V
DD
= 30 V, R
L
= 20
Ω
I
D
≅
1.5 A, V
GEN
= 10 V, R
G
= 1
Ω
f = 1 MHz
0.6
V
DS
= 30 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 30 V, V
GS
= 10 V, I
D
= 1.9 A
V
DS
= 30 V, V
GS
= 4.5 V, I
D
= 1.9 A
190
26
15
4.5
2.3
0.8
1
2.8
4
10
10
7
15
16
11
11
5.6
6
15
15
10.5
23
24
17
17
ns
ns
Ω
6.8
3.5
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
DS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 1.9 A
V
GS
= 4.5 V, I
D
= 1.7 A
V
DS
= 15V, I
D
= 1.9 A
8
0.130
0.160
5
0.156
0.192
1
60
55
-5
3
± 100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69958
S-83053-Rev. B, 29-Dec-08
New Product
Si2308BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
V
GS
= 10 thru 5
V
8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 4
V
6
3
T
C
= - 55 °C
2
T
C
= 125 °C
1
2
V
GS
= 3
V
V
GS
= 2
V
0
1
2
3
4
5
T
C
= 25 °C
4
4
0
0
0.0
0.7
1.4
2.1
2.8
3.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.30
300
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
240
0.24
C - Capacitance (pF)
C
iss
180
0.18
V
GS
= 4.5
V
V
GS
= 10
V
120
0.12
60
C
oss
0.06
0
2
4
6
8
10
0
0
C
rss
10
20
30
40
50
60
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 1.9 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
V
DS
= 30
V
6
V
DS
= 48
V
4
1.7
2.0
Capacitance
V
GS
= 10
V,
I
D
= 1.9 A
(Normalized)
1.4
1.1
V
GS
= 4.5
V,
I
D
= 1.7 A
2
0.8
0
0
1
2
3
4
5
0.5
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 69958
S-83053-Rev. B, 29-Dec-08
www.vishay.com
3
New Product
Si2308BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
0.35
I
D
= 1.9 A
R
DS(on)
- On-Resistance (Ω)
0.30
I
S
- Source Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.25
T
J
= 125 °C
0.20
0.15
T
J
= 25 °C
0.1
0.0
0.10
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.4
10
On-Resistance vs. Gate-to-Source Voltage
8
2.1
I
D
= 250
µA
Po
w
er (
W
)
6
T
A
= 25 °C
Single Pulse
V
GS(th)
(V)
1.8
4
1.5
2
1.2
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
10
Limited
by
R
DS(on)
*
100
µs
I
D
- Drain Current (A)
1
1 ms
10 ms
0.1
Single Pulse Power
100 ms
T
A
= 25 °C
Single Pulse
0.01
0.1
1
1 s, 10 s
DC
100
BVDSS Limited
10
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
www.vishay.com
4
Document Number: 69958
S-83053-Rev. B, 29-Dec-08
New Product
Si2308BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3.0
2.4
I
D
- Drain Current (A)
1.8
1.2
0.6
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
2.0
1.2
1.6
0.9
Power (W)
1.2
Power (W)
0
25
50
75
100
125
150
0.6
0.8
0.3
0.4
0.0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Case
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
