Si2307DS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
–30
r
DS(on)
(W)
0.080 @ V
GS
= –10 V
0.140 @ V
GS
= –4.5 V
I
D
(A)
–3
–2
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
Si2307DS (A7)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLSS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
–30
"20
–3
–2.5
–12
–1.25
1.25
Unit
V
A
W
0.8
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t
v
5 sec
Steady State
Notes
a. Surface mounted on FR4 board.
b. t
v
5 sec.
Document Number: 70843
S-60570—Rev. A, 16-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
Symbol
R
thJA
Typical
Maximum
100
Unit
_C/W
130
2-1
Si2307DS
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED
)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
Drain Source On Resistance
a
Forward Transconductance
a
Diode Forward Voltage
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= –10
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –24 V, V
GS
= 0 V
T
J
= 55
_
C
V
DS
v
–5 V, V
GS
= –10 V
V
GS
= –10 V, I
D
= –3 A
V
GS
= –4.5 V, I
D
= –2.5 A
V
DS
= –10V, I
D
= –3 A
I
S
= –1.25 A, V
GS
= 0 V
–6
0.064
0.103
4.5
–1.2
0.080
W
0.140
S
V
–30
V
–1.0
"100
–1
–10
mA
A
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= –15 V, V
GS
= 0, f = 1 MHz
15 V
0
MH
V
DS
= –15 V, V
GS
= –10 V
15 V
10
I
D
^
–3 A
3
10
1.9
2
565
126
75
pF
F
15
nC
C
Switching
b
Turn-On Time
t
d(on)
t
r
Turn-Off Time
t
d(off)
t
f
Notes
a. Pulse test: PW
v300
ms
duty cycle
v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
V
DD
= –15 V, R
L
= 15
W
15 V
I
D
^
–1.0 A, V
GEN
= –10 V
R
G
= 6
W
10
9
27
7
20
20
ns
50
16
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S
FaxBack 408-970-5600
2-2
Document Number: 70843
S-60570—Rev. A, 16-Nov-98
Si2307DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
12
Output Characteristics
V
GS
= 10 thru 5 V
12
Transfer Characteristics
T
C
= –55_C
10
I
D
– Drain Current (A)
I
D
– Drain Current (A)
4V
8
10
25_C
8
125_C
6
6
4
3V
2
4
2
0
0
2
4
6
8
10
0
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
800
700
C
iss
r
DS(on)
– On-Resistance (
W
)
0.4
C – Capacitance (pF)
600
500
400
300
200
100
V
GS
= 10 V
0
0
2
4
6
8
10
0
0
6
C
rss
Capacitance
0.2
V
GS
= 4.5 V
C
oss
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
DS
= 15 V
I
D
= 3 A
V
GS
– Gate-to-Source Voltage (V)
8
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 3 A
1.4
r
DS(on)
– On-Resistance
(Normalized)
0
2
4
6
8
10
6
1.2
4
1.0
2
0.8
0
0.6
–50
0
50
100
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70843
S-60570—Rev. A, 16-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si2307DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
1.0
10.0
r
DS(on)
– On-Resistance (
W
)
0.8
On-Resistance vs. Gate-to-Source Voltage
I
S
– Source Current (A)
T
J
= 150_C
1.0
T
J
= 25_C
0.6
I
D
= –3 A
0.4
0.2
0.1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
0.6
Threshold Voltage
12
10
Single Pulse Power
0.4
V
GS(th)
Variance (V)
8
I
D
= 250
mA
0.0
Power (W)
0.2
6
T
A
= 25_C
Single Pulse
4
–0.2
2
–0.4
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
1
10
Time (sec)
100
500
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1.00
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.10
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 130_C/W
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
500
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70843
S-60570—Rev. A, 16-Nov-98
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