Si2306DS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
3.5
2.8
r
DS(on)
(W)
0.057 @ V
GS
= 10 V
0.094 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
-
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
Si2306DS (A6)*
*Marking Code
Ordering Information: Si2306DS-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
3.5
2.8
16
1.25
1.25
0.80
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Notes
a. Surface Mounted on FR4 Board.
b. t
v
5 sec.
Document Number: 70827
S-31873—Rev. C, 15-Sep-03
www.vishay.com
t
v
5 sec
Steady State
Symbol
R
thJA
Typical
130
Maximum
100
Unit
_C/W
1
Si2306DS
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D( )
D(on)
V
DS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
4.5 V, V
GS
= 10 V
V
DS
w
4.5 V, V
GS
= 4.5 V
V
GS
= 10 V, I
D
= 3.5 A
V
GS
= 4.5 V, I
D
= 2.8 A
V
DS
= 4.5 V, I
D
= 3.5 A
I
S
= 1.25 A, V
GS
= 0 V
6
4
0.046
0.070
6.9
0.8
1.2
0.057
0.094
W
S
V
30
1
"100
0.5
10
V
nA
mA
Symbol
Test Condition
Min
Typ
Max
Unit
On-State
On State Drain Current
a
A
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
r
DS(on)
g
fs
V
SD
Dynamic
b
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gt
Q
gs
Q
gd
R
g
C
iss
C
oss
C
rss
V
DS
= 15 V, V
GS
= 0 V, f= 1 MHz
,
,
0.5
555
120
60
p
pF
V
DS
= 15 V, V
GS
= 10 V, I
D
= 3.5 A
,
,
V
DS
= 15 V, V
GS
= 5 V, I
D
= 3.5 A
4.2
8.5
1.9
1.35
2.4
W
7
20
nC
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
9
7.5
17
5.2
20
18
35
12
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
www.vishay.com
2
Document Number: 70827
S-31873—Rev. C, 15-Sep-03
Si2306DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
16
Output Characteristics
16
Transfer Characteristics
12
I
D
- Drain Current (A)
V
GS
= 10 thru 5 V
I
D
- Drain Current (A)
12
8
4V
8
T
C
= 125_C
4
25_C
0
- 55_C
3
4
5
4
3 thru 1 V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
0
1
2
V
GS
- Gate-to-Source Voltage (V)
0.5
On-Resistance vs. Drain Current
800
700
Capacitance
r
DS(on)
- On-Resistance (
W
)
0.4
C - Capacitance (pF)
600
500
400
300
200
C
oss
C
iss
0.3
0.2
V
GS
= 4.5 V
V
GS
= 10 V
0.1
100
0
C
rss
0
6
12
18
24
30
0.0
0
4
8
I
D
- Drain Current (A)
12
16
V
DS
- Drain-to-Source Voltage (V)
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15V
I
D
= 3.5 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 3.5 A
6
r
DS(on)
- On-Resistance (
W)
(Normalized)
4
6
8
10
8
1.4
1.2
4
1.0
2
0.8
0
0
2
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Document Number: 70827
S-31873—Rev. C, 15-Sep-03
www.vishay.com
3
Si2306DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
0.5
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
- On-Resistance (
W
)
0.4
I
S
- Source Current (A)
T
J
= 150_C
0.3
0.2
I
D
= 3.5 A
0.1
T
J
= 25_C
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.2
V
GS(th)
Variance (V)
- 0.0
Power (W)
- 0.2
- 0.4
- 0.6
- 0.8
- 50
I
D
= 250
mA
12
10
Single Pulse Power
8
6
4
2
T
A
= 25_C
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
500
T
J
- Temperature (_C)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 130_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
4. Surface Mounted
10
100
500
Square Wave Pulse Duration (sec)
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Document Number: 70827
S-31873—Rev. C, 15-Sep-03
4
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