Si2305ADS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
-8
±8
- 5.4
- 4.3
- 4.1
a, b
- 3.3
a, b
- 10
- 1.4
- 0.8
a, b
1.7
1.1
0.96
a, b
0.62
a, b
- 50 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
I
DM
I
S
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
T
J
, T
stg
°C
Document Number: 69940
S09-0538-Rev. D, 06-Apr-09
www.vishay.com
1
New Product
Si2305ADS
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 175 °C/W.
a, b
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
100
60
Maximum
130
75
Unit
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 8 V, V
GS
= 0 V
V
DS
= - 8 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 4.1 A
V
GS
= - 2.5 V, I
D
= - 3.4 A
V
GS
= - 1.8 V, I
D
= - 2.0 A
V
DS
= - 5 V, I
D
= - 4.1 A
Min.
-8
Typ.
Max.
Unit
V
- 55
2.1
- 0.45
- 0.8
± 100
-1
- 10
-5
0.032
0.048
0.070
8
740
0.040
0.060
0.088
mV/°C
V
nA
µA
A
Ω
S
V
DS
= - 4 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 4 V, V
GS
= - 4.5 V, I
D
= - 4.1 A
V
DS
= - 4 V, V
GS
= - 2.5 V, I
D
= - 4.1 A
f = 1 MHz
V
DD
= - 4 V, R
L
= 1.2
Ω
I
D
≅
- 3.3 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
1.4
290
190
7.8
4.5
1.2
1.6
7
13
35
32
10
5
14
20
53
48
20
10
17
33
24
- 1.4
- 10
- 0.8
33
14
14
19
- 1.2
50
21
15
9
pF
nC
Ω
ns
V
DD
= - 4 V, R
L
= 1.2
Ω
I
D
≅
- 3.3 A, V
GEN
= - 8 V, R
g
= 1
Ω
11
22
16
T
C
= 25 °C
I
F
= - 3.3 A
A
V
ns
nC
ns
I
F
= - 3.3 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 69940
S09-0538-Rev. D, 06-Apr-09
New Product
Si2305ADS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
12
12
I
D
- Drain Current (A)
9
V
GS
= 4.5
V
thru 2
V
I
D
- Drain Current (A)
9
6
V
GS
= 1.5
V
6
3
V
GS
= 0.5
V
V
GS
= 1
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
3
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.10
1200
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.08
V
GS
= 1.8
V
C - Capacitance (pF)
900
C
iss
0.06
V
GS
= 2.5
V
600
C
oss
300
0.04
V
GS
= 4.5
V
C
rss
0.02
0
2
4
6
8
10
0
0
2
4
6
8
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
4.5
I
D
= 4.1 A
V
GS
- Gate-to-Source
Voltage
(V)
3.6
R
DS(on)
- On-Resistance
V
DS
= 4
V
2.7
V
DS
= 6.4
V
1.3
(Normalized)
1.5
Capacitance
V
DS
= 2.5
V,
I
D
= 3.4 A
1.1
V
DS
= 4.5
V,
I
D
= 4.1 A
1.8
0.9
0.9
0.0
0.0
1.5
3.0
4.5
6.0
7.5
9.0
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 69940
S09-0538-Rev. D, 06-Apr-09
www.vishay.com
3
New Product
Si2305ADS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.10
I
D
= 4.1 A
R
DS(on)
- On-Resistance (Ω)
0.08
I
S
- Source Current (A)
10
0.06
T
A
= 125 °C
0.04
T
J
= 150 °C
1
T
J
= 25 °C
0.02
T
A
= 25 °C
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.7
30
On-Resistance vs. Gate-to-Source Voltage
0.6
I
D
= 250
µA
20
V
GS(th)
(V)
Power (W)
10
0.3
- 25
0
25
50
75
100
125
150
0
0.001
0.5
0.4
0.2
- 50
0.01
0.1
Time (s)
1
10
100
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
I
D
- Drain Current (A)
10
Single Pulse Power, Junction-to-Ambient
1 ms
1
10 ms
100 ms
1s
10 s
DC
T
A
= 25 °C
Single Pulse
0.01
0.1
1
10
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
0.1
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 69940
S09-0538-Rev. D, 06-Apr-09
New Product
Si2305ADS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
6.0
4.5
I
D
- Drain Current (A)
3.0
1.5
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
2.0
1.00
1.5
Power (W)
Power (W)
0
25
50
75
100
125
150
0.75
1.0
0.50
0.5
0.25
0.0
0.00
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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