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SI2303BDS_RC: 产品描述R-C Thermal Model Parameters; 文件大小67KB，共3页; 制造商Vishay(威世); 官网地址http://www.vishay.com

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SI2303BDS_RC概述

R-C Thermal Model Parameters

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Si2303BDS_RC

Vishay Siliconix

R-C Thermal Model Parameters

DESCRIPTION

The parametric values in the R-C thermal model have

been derived using curve-fitting techniques. These

techniques are described in "A Simple Method of

Generating Thermal Models for a Power MOSFET"[1].

When implemented in P-Spice, these values have

matching characteristic curves to the Single Pulse

Transient Thermal Impedance curves for the

MOSFET.

R-C values for the electrical circuit in the Foster/Tank

and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in

P-SPICE, refer to Application Note AN609 Thermal Simulations Of

Power MOSFETs on P-SPICE Platform.

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION

Thermal Resistance (°C/W)

Junction to

RT1

RT2

RT3

RT4

Junction to

CT1

CT2

CT3

CT4

Ambient

40.9471

90.1932

38.5858

5.2739

Ambient

1.6877

12.5004 m

1.8943 m

132.4314 u

Case

N/A

Case

N/A

Foot

25.8832

12.8887

35.7078

3.5203

Foot

9.6862 m

2.2361 m

20.7116 m

125.9647 u

Thermal Capacitance (Joules/°C)

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data

sheet of the same number for guaranteed specification limits.

Document Number: 74985

Revision 13-Mar-07

www.vishay.com

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