Si2303ADS
New Product
Vishay Siliconix
P-Channel, 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
–30
r
DS(on)
(W)
0.240 @ V
GS
= –10 V
0.460 @ V
GS
= –4.5 V
I
D
(A)
b
–1.4
–1.0
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
Si2303DS (3A)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
b
_
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
b
Power Dissipation
b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
–0.75
0.9
0.57
–55 to 150
Symbol
V
DS
V
GS
5 sec
–30
"20
–1.4
–1.1
–10
Steady State
Unit
V
–1.3
–1.0
A
–0.6
0.7
0.45
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Ambient
c
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t
v
5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71837
S-20617—Rev. B, 29-Apr-02
www.vishay.com
R
thJA
Symbol
Typical
115
140
Maximum
140
175
Unit
_C/W
_
1
Si2303ADS
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
a
Forward Transconductance
a
Diode Forward Voltage
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= –10
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –30 V, V
GS
= 0 V
V
DS
= –30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
v
–5 V, V
GS
= –10 V
V
GS
= –10 V, I
D
= –1.7 A
V
GS
= –4.5 V, I
D
= –1.3 A
V
DS
= –5 V, I
D
= –1.7 A
I
S
= –0.75 A, V
GS
= 0 V
–6
0.120
0.230
2.4
–0.80
–1.2
0.240
0.460
W
S
V
–30
–1.0
–3.0
"100
–1
–10
mA
m
A
V
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= –15 V, V
GS
= 0, f = 1 MHz
V
DS
= –15 V, V
GS
= –10 V
I
D
^
–1.7 A
4.5
0.9
0.9
260
65
35
pF
10
nC
Switching
c
t
d(on)
Turn-On Time
t
r
t
d(off)
t
f
Notes
a. Pulse test: PW
v300
ms
duty cycle
v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
S
FaxBack 408-970-5600
V
DD
= –15 V, R
L
=15
W
I
D
^
–1.0 A, V
GEN
= –4.5 V
R
G
= 6
W
6
10
15
7
20
20
ns
35
20
Turn-Off Time
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2
Document Number: 71837
S-20617—Rev. B, 29-Apr-02
Si2303ADS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
Vishay Siliconix
Output Characteristics
V
GS
= 10 thru 6 V
10
Transfer Characteristics
8
I D – Drain Current (A)
5V
I D – Drain Current (A)
8
T
C
= –55_C
25_C
6
125_C
4
6
4
4V
2
1, 2 V
2
3V
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
7
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.8
400
Capacitance
r DS(on)– On-Resistance (
W
)
C – Capacitance (pF)
0.6
300
C
iss
0.4
V
GS
= 4.5 V
200
0.2
V
GS
= 10 V
100
C
oss
C
rss
0.0
0
2
4
6
8
10
0
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
DS
= 15 V
I
D
= 1.7 A
V GS – Gate-to-Source Voltage (V)
8
Gate Charge
1.8
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 1.7 A
1.6
r DS(on)– On-Resistance (
W
)
(Normalized)
1.4
6
1.2
4
1.0
2
0.8
0
0
1
2
3
4
5
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 71837
S-20617—Rev. B, 29-Apr-02
www.vishay.com
3
Si2303ADS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
1.0
On-Resistance vs. Gate-to-Source Voltage
I S – Source Current (A)
1
T
J
= 150_C
r DS(on)– On-Resistance (
W
)
0.8
0.6
I
D
= 1.7 A
0.4
0.1
T
J
= 25_C
0.01
0.2
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.6
0.5
0.4
V GS(th) Variance (V)
0.3
0.2
0.1
–0.0
–0.1
–0.2
–0.3
–50
0
0.01
2
I
D
= 250
mA
Power (W)
6
8
10
Single Pulse Power
T
J
= 25_C
Single Pluse
4
–25
0
25
50
75
100
125
150
0.10
1.00
10.00
100.00
1000.00
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 62.5_C/W
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 71837
S-20617—Rev. B, 29-Apr-02
4
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