Si2302CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
0.72
0.86
0.55
- 55 to 150
2.9
2.3
10
0.6
0.71
0.46
W
°C
5s
20
±8
2.6
2.1
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
t
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
120
140
62
Maximum
145
175
78
°C/W
Unit
Document Number: 68645
S12-2336-Rev. D, 01-Oct-12
For technical questions, contact:
pmostechsupport@vishay.comm
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2302CDS
Vishay Siliconix
SPECIFICATIONS
(T
A
= 25 °C, unless otherwise noted)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
F
= 3.6 A, dI/dt = 100 A/µs
V
DD
= 10 V, R
L
= 2.78
I
D
3.6 A, V
GEN
= 4.5 V, R
g
= 1
8
7
30
7
8.5
2
15
15
45
15
15
4
nC
ns
Q
g
Q
gs
Q
gd
R
g
f = 1 MHz
2
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 3.6 A
3.5
0.6
0.45
4
8
5.5
nC
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 50 °C
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
10
V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 3.6 A
V
GS
= 2.5 V, I
D
= 3.1 A
V
DS
= 5 V, I
D
= 3.6 A
I
S
= 0.95 A, V
GS
= 0 V
6
0.045
0.056
13
0.7
1.2
0.057
0.075
20
0.40
0.85
± 100
0.1
4
15
A
S
V
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test: Pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
V
GS
= 5
V
thru 2
V
8
I
D
- Drain Current (A)
V
GS
= 1.5
V
I
D
- Drain Current (A)
8
10
6
6
4
4
T
C
= 25 °C
2
T
C
= 125 °C
T
C
= - 55 °C
2
V
GS
= 1
V
0
0.0
0.5
1.0
1.5
V
DS
- Drain-to-Source
Voltage
(V)
2.0
0
0.0
0.4
0.8
1.2
1.6
2.0
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
www.vishay.com
2
Transfer Characteristics
Document Number: 68645
S12-2336-Rev. D, 01-Oct-12
For technical questions, contact:
pmostechsupport@vishay.comm
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2302CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.0
0.07
R
DS(on)
- On-Resistance (Ω)
1.6
I
D
- Drain Current (A)
0.06
V
GS
= 2.5
V
1.2
0.05
V
GS
= 4.5
V
0.8
T
C
= 25 °C
0.4
T
C
= 125 °C
0.0
0.0
T
C
= - 55 °C
0.3
0.6
0.9
1.2
1.5
0.04
0.03
0
2
4
6
I
D
- Drain Current (A)
8
10
V
GS
- Gate-to-Source
Voltage
(V)
Transfer Characteristics
400
C
iss
320
C - Capacitance (pF)
5
On-Resistance vs. Drain Current
I
D
= 3.6 A
V
GS
- Gate-to-Source
Voltage
(V)
4
V
DS
= 10
V
V
DS
= 5
V
3
V
DS
= 15
V
2
240
160
C
oss
80
C
rss
0
0
5
10
15
20
V
DS
- Drain-to-Source
Voltage
(V)
1
0
0
1
2
3
4
Q
g
- Total Gate Charge (nC)
Capacitance
1.6
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 2.5
V,
I
D
= 3.1 A
1.4
I
S
- Source Current (A)
10
100
Gate Charge
T
J
= 150 °C
1
1.2
V
GS
= 4.5
V,
I
D
= 3.6 A
1.0
0.1
T
J
= 25 °C
0.8
0.01
T
J
= - 55 °C
0.6
- 50
- 25
0
25
50
75
100
125
150
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: 68645
S12-2336-Rev. D, 01-Oct-12
For technical questions, contact:
pmostechsupport@vishay.comm
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?68645.
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.comm
Document Number: 68645
S12-2336-Rev. D, 01-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
EtherCAT（Ethernet for Control Automation Technology）是一种基于以太网的开发构架的实时工业现场总线通讯协议，EtherCAT是最快的工业以太网技术之一，同时它提供纳秒级精确同步。相对于设置了相同循环时间的其他总线系统，EtherCAT系统结构通常能减少25%-30%的CPU负载，EtherCAT的出现为系统的实时性能和拓扑的灵活性树立了新的标准。...[详细]
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